HMC559 Datasheet, PDF (4/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz

v03.0208
Typical Applications
The HMC559 wideband PA is ideal for:
• Telecom Infrastructure
3
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Features
P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.50 x 0.1 mm
General Description
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
20 GHz. The amplifier provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain flatness is slightly posi-
tive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifier applications.
The HMC559 amplifier I/O’s are internally matched to
50 Ohms facilitating integration into Multi-Chip-Mod-
ules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils).
3 - 62
Electrical Specifications, T_A = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
Min. Typ. Max.
DC - 6
11
13
±0.5
0.01 0.02
22
16
25
28
30
37
4.5
400
Min.
11
24.5
Typ.
6 - 12
13.5
±0.5
0.01
15
16
27.5
29
36
3.5
400
Max.
0.02
Min.
Typ.
12 - 20
11.5
14
±1.5
0.02
13
8
23
27
28.5
33
4.5
400
Max.
0.03
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com