AS29LV016D Datasheet, PDF (32/40 Pages) Micross Components – Superior inadvertent write protection

AC CHARACTERISTICS
CE#
WE#
COTS PEM
BOOT SECTOR FLASH
AS29LV016
The falling edge of the last W
BYTE#
t_SET
(t_AS)
t_HOLD (t_AH)
Note: Refer to the Erase/Program Operations table for t_AS and t_AH specifications.
Figure 15. BYTE# Timings for Write Operations
Erase / Program Operations
Parameter
JEDEC
t_AVAV
t_AVWL
t_WLAX
t_DVWH
t_WHDX
Std
t_WC
t_AS
t_AH
t_DS
t_DH
t_OES
t_GHWL
t_GHWL
t_ELWL
t_WHEH
t_WLWH
t_WHWL
t_CS
t_CH
t_WP
t_WPH
t_SR/W
t_WHWH1
t_WHWH1
t_WHWH2
t_WHWH2
t_VCS
t_RB
t_BUSY
Description
Write Cycle Time¹
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enagle Setup Time
Read Recovery Time Before Write,
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation²
Sector Erase Operation²
V_CC Setup Time¹
Recovery Time from RY / BY#
Program / Erase Valid to RY / BY# Delay
Byte
Word
Test Setup
Min
Typ
Min
Max
Notes:
1. Not 100% Tested.
2. See Erase and Programming Performance on page 38 for more information.
Speed Options
70
90
100
70
90
100
0
45
35
45
55
0
0
0
0
0
35
30
20
5
7
0.7
50
0
90
Unit
ns
μs
sec
μs
ns
AS29LV016
Rev. 2.2 01/10
32
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