ICE7N60FP Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE7N60FP
Output Characteristics
20
V_GS = 10 to 7V
20
15
15
6V
10
10
Transfer Characterstics
5
5V
5
T_J = 150°C
25°C
0
0
0
5
10
15
20
0
2
4
6
8
10
V_DS - Drain to Source Voltage (V)
V_GS - Gate to Source Voltage (V)
1200
1000
800
600
400
200
0
0
On Resistance vs Drain Current
V_GS = 10V
5
10
15
I_D - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 3.5A
2.5
2.0
1.5
1.0
0.5
1.0
20
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
10
9
8
7
V_DS = 480V
I_D = 7A
6
5
4
3
2
1
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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