ICE4N70 Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE4N70
Output Characteristics
12
10
V_GS = 10V
8
6
4
2
0
0
5
10
15
V_DS - Drain to Source Voltage (V)
8V
7V
6V
20
Transfer Characterstics
12
10
8
6
4
2
T_J = 150°C
25°C
0
0
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
On State Resistance vs Drain Current
V_GS = 10V
2
4
6
8
I_D - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 2A
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
10
9
8
7
6
5
4
3
2
1
0
0
Gate Charge
V_DS = 480V
I_D = 2A
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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