ICE47N65W Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE47N65W
Output Characteristics
120
V_GS = 10V to 6.5V
6V
100
80
60
40
20
0
0
5.5V
5V
4.5V
2
4
6
8
10
V_DS - Drain to Source Voltage (V)
120
100
80
60
40
20
0
0
Transfer Characterstics
T_J = 150°C
25°C
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
200
160
120
80
40
0
0
On State Resistance vs Drain Current
V_GS = 10V
20
40
60 80 100 120
I_D - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 23A
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
10
9
8
7
V_DS = 480V
I_D = 47A
6
5
4
3
2
1
0
0
50
100
150
200
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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