ICE30N60W Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE30N60W
100
90
80
70
60
50
40
30
20
10
0
0
Output Characteristics
100
V_GS = 10V to 7V
6V
90
80
70
60
50
40
5V
30
20
10
0
5
10
15
0
V_DS - Drain to Source Voltage (V)
Transfer Characterstics
T_J = 150°C
25°C
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
200
160
120
80
40
0
0
On State Resistance vs Drain Current
On Resistance vs Junction Temperature
V_GS = 10V
4.0
3.5
3.0
V_GS = 10V
I_D = 18A
2.5
2.0
1.5
1.0
20
40
60
80
100
I_D - Drain Current (A)
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
10
9
8
7
6
5
4
3
2
1
0
0
Gate Charge
V_DS = 480V
I_D = 35A
50
100
150
200
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
3