ICE20N170FP Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE20N170FP
60
50
40
30
20
10
0
0
Output Characteristics
V_GS = 10V to 7V
60
Transfer Characterstics
50
40
6V
30
20
5V
10
T_J = 150°C
25°C
0
5
10
15
0
2
4
6
8
10
V_DS - Drain to Source Voltage (V)
V_GS - Gate to Source Voltage (V)
500
400
300
200
100
0
0
On State Resistance vs Drain Current
V_GS = 10V
10 20
30 40
50 60
I_D - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 10A
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
10
Gate Charge
9
8
V_DS = 480V
7
I_D = 20A
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
3