ICE15N65FP Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE15N65FP
Output Characteristics
Transfer Characterstics
45
45
V_GS = 10V
40
40
35
7V
35
30
30
25
6V
25
20
20
15
15
5V
10
10
T_J = 150°C
5
5
25°C
0
0
3
6
9
12
15
V_DS - Drain to Source Voltage (V)
0
0
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
600
500
400
300
200
100
0
0
On State Resistance vs Drain Current
V_GS = 10V
5 10 15 20 25 30 35 40 45
I_D - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 7.5A
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
10
9
8
V_DS = 480V
7
I_D = 15A
6
5
4
3
2
1
0
0
20
40
60
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
3