ICE15N60W Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE15N60W
45
40
35
30
25
20
15
10
5
0
0
Output Characteristics
V_GS = 10V to 7V
6V
5V
4
8
12
V_DS - Drain to Source Voltage (V)
4V
16
45
40
35
30
25
20
15
10
5
0
0
Transfer Characterstics
T_J = 150°C
25°C
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
700
600
500
400
300
200
100
0
0
On State Resistance vs Drain Current
V_GS = 10V
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 7.5A
2.5
2.0
1.5
1.0
10
20
30
I_D - Drain Current (A)
10
9
8
7
6
5
4
3
2
1
0
0
0.5
0.0
40
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
V_DS = 480V
I_D = 15A
20
40
60
80
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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