ICE11N65FP Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE11N65FP
Output Characteristics
35
Transfer Characterstics
35
V_GS = 10V
30
30
7V
25
25
20
6V
20
15
15
10
10
5
5V
5
T_J = 150°C
25°C
0
0
3
6
9
12
15
V_DS - Drain to Source Voltage (V)
0
0
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
600
500
400
300
200
100
0
0
On State Resistance vs Drain Current
V_GS = 10V
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 7.5A
2.5
2.0
1.5
1.0
0.5
5 10 15 20 25 30 35
I_D - Drain Current (A)
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
10
9
8
V_DS = 480V
7
I_D = 15A
6
5
4
3
2
1
0
0
20
40
60
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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