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MIMMK130S160B Datasheet, PDF (2/5 Pages) Micross Components – 1600V 130A thyristor Module RoHS Compliant
ELECTRICAL CHARACTERISTICS
Symbol Test Condition
16.7% x π x IAV < I <π x IAV,TJ =130°C;
VTO
I > π x IAV , TJ =130°C;
16.7% x π x IAV < I <π x IAV,TJ =130°C;
rt
I > π x IAV , TJ =130°C;
IH
VAK= 6V, initial IT=30A;
IL
Anode supply =6V, resistive load=1Ω,
gate pulse =10V, 100us;
VTM
ITM=408A, td=10 ms, half sine;
PGM
tp≤5ms, Tj=125°C;
PGM(AV)
f=50Hz, Tj=125°C;
IGM
-VGT
tp≤5ms, Tj=125°C;
VA=6V, RA=1Ω, Tj=-40°C;
VGT
VA=6V, RA=1Ω;
VA=6V, RA=1Ω, Tj=125°C;
VA=6V, RA=1Ω, Tj=-40°C;
IGT
VA=6V, RA=1Ω;
VA=6V, RA=1Ω, Tj=125°C;
VGD
VAK=VDRM, Tj=125
IGD
di/dt
ITM=400A, rated VDRM, Tj=125
MIMMK130S160B
TC=25°C unless otherwise specified
Min. Typ. Max. Unit
0.86
V
1.05
V
2.02
mΩ
1.65
mΩ
200
mA
400
mA
1.57
V
12
W
3
W
3
A
10
V
4
2.5
V
1.7
270
150
A
80
0.3
V
10
mA
300
A/us
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Test Condition
Rthjc
DC operation, per junction;
RTHCS
Mounting surface smooth,flat and greased, per junction;
Mounting torque(M6)
Md
Terminal connection torque(M6)
Weight
Typical value
TC=25°C unless otherwise specified
value Unit
0.20
K/W
0.1
K/W
4 to 6
N·m
156
g