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| MIMMG200DR120DE Datasheet, PDF (2/5 Pages) Micross Components – 1200V 200A IGBT Module RoHS Compliant | |||
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ELECTRICAL CHARACTERISTICS
MIMMG200DR120DE
TC=25°C unless otherwise specified
Symbol
Parameter
IGBT
VGE(th) Gate - Emitter Threshold Voltage
VCE(sat)
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
Free-Wheeling Diode
VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
Test Conditions
VCE=VGE, IC=8mA
IC=200A, VGE=15V, TJ=25°C
IC=200A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V, VGE=±20V
VCC=600V, IC=200A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V, IC=200A
RG =5Ω,VGE=±15V
TJ=25°C
Inductive Load
VCC=600V, IC=200A
RG =5Ω,VGE=±15V
TJ=125°C
Inductive Load
VCC=600V, IC=200A
RG =5Ω
VGE=±15V
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
IF=200A , VGE=0V, TJ=25°C
IF=200A , VGE=0V, TJ=125°C
IF=200A , VR=800V
diF/dt=-1000A/μs
TJ=125°C
Min.
5
-400
Typ.
6.2
1.8
2.0
0.4
6
2100
14.9
1.04
0.7
125
60
420
60
135
60
490
75
17
24.8
13.6
21.6
2.0
1.7
260
110
13.5
Max.
7
1
400
2.44
2.20
THERMAL AND MECHANICAL CHARACTERISTICS
Unit
V
V
V
mA
mA
nA
nC
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
V
V
ns
A
µC
Symbol
Parameter
RthJC
Junction-to-Case Thermal Resistance
RthJCD Junction-to-Case Thermal Resistance
Torque Module-to-Sink
Torque Module Electrodes
Weight
Test Conditions
Per IGBT
Per Inverse Diode
Recommendedï¼M6ï¼
Recommendedï¼M6ï¼
Min.
3
2.5
Typ.
285
Max.
0.09
0.22
5
5
Unit
K /W
K /W
N· m
N· m
g
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