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| MIMMG100SR060UZK Datasheet, PDF (2/5 Pages) Micross Components – 600V 100A IGBT Module RoHS Compliant | |||
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ELECTRICAL CHARACTERISTICS
MIMMG100SR060UZK
TC=25°C unless otherwise specified
Symbol
Parameter
IGBT
VGE(th) Gate - Emitter Threshold Voltage
VCE(sat)
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
Free-Wheeling Diode
VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
Test Conditions
VCE=VGE, IC=250μA
IC=100A, VGE=15V, TJ=25°C
IC=100A, VGE=15V, TJ=125°C
VCE=600V, VGE=0V, TJ=25°C
VCE=600V, VGE=0V, TJ=125°C
VCE=0V, VGE=±20V
VCC=300V, IC=100A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=100A
RG =10Ω,VGE=±15V
TJ=25°C
Inductive Load
VCC=300V, IC=100A
RG =10Ω,VGE=±15V
TJ=125°C
Inductive Load
VCC=300V, IC=100A
RG =10Ω
VGE=±15V
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
IF=100A , VGE=0V, TJ=25°C
IF=100A , VGE=0V, TJ=125°C
IF=100A , VR=400V
diF/dt=-1000A/μs
TJ=125°C
Min.
3.5
-1.1
Typ.
1.9
2.1
3
230
5.3
0.52
0.34
45
45
320
35
50
45
350
40
3.5
4.5
2.5
3.5
1.9
1.7
50
45
1.5
THERMAL AND MECHANICAL CHARACTERISTICS
Max.
5.5
0.5
1.1
2.2
2.0
Unit
V
V
V
mA
mA
μA
nC
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
V
V
ns
A
µC
Symbol
Parameter
RthJC
Junction-to-Case Thermal Resistance
RthJCD Junction-to-Case Thermal Resistance
Torque Module-to-Sink
Torque Module Electrodes
Weight
Test Conditions
Per IGBT
Per Inverse Diode
Recommendedï¼M6ï¼
Recommendedï¼M5ï¼
Min.
3
2.5
Typ.
150
Max.
0.2
0.5
5
5
Unit
K /W
K /W
N· m
N· m
g
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