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| ICE22N65W Datasheet, PDF (2/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET | |||
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ICE22N65W
Symbol Parameter
Dynamic Characteristics
Ciss
Coss
Crss
gfs
td(on)
Tr
td(off )
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Charge Characteristics
Qgs
Qgd
Qg
Vplateau
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Gate Plateau Voltage
Reverse Diode
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irm
Peak Reverse Recovery Current
Values
Min Typ Max
Unit Conditions
- 2650 -
- 943 -
-
8
-
-
22
-
-
10
-
-
5
-
-
67
-
- 4.5 -
pF VGS = 0V, VDS = 25V, f = 1 MHz
S
VDS = >2*ID* RDS, ID = 11A
nS
VDS = 380V, VGS = 10V, ID = 22A, RG = 4â¦
(External)
-
16
-
-
30
-
-
82
-
-
5
-
nC
VDS = 480V, ID = 22A, VGS = 0 to 10V
V
-
1.0 1.2
- 423 -
-
8
-
-
34
-
V
VGS = 0V, IS = IF
ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS
A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
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