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U440_TO-71 Datasheet, PDF (1/1 Pages) Micross Components – a tightly matched Monolithic Dual N-Channel JFET
U440
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U440
The U440 is a tightly matched Monolithic Dual N-Channel JFET
The U440 are monolithic dual JFETs mounted in a
single TO-71 package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The U440 is a
direct replacement for discontinued Siliconix U440.
The hermetically sealed TO-71 is well suited for military
applications.
(See Packaging Information).
U440 Applications:
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
FEATURES
Direct Replacement for SILICONIX U440
HIGH CMRR
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
CMRR ≥ 85dB
IGSS ≤ 1 pA
‐65°C to +150°C
‐55°C to +135°C
500mW
50mA
‐25V
‐25V
±50V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP
Click To |VGS1–VGS2|
Differential Gate to Source Cutoff Voltage
∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff
20
Voltage Change with Temperature
IDSS1 / IDSS2
Gate to Source Saturation Current Ratio
0.07
Gfs1 / Gfs2
Forward Transconductance Ratio2
0.97
CMRR
Common Mode Rejection Ratio
85
MAX UNITS CONDITIONS
Buy 10
mV VDG = 10V, ID = 5mA
µV/°C VDG = 10V, ID = 5mA
TA = ‐55°C to +125°C
%
VDS = 10V, VGS = 0V
%
VDS = 10V, ID = 5mA, f = 1kHz
dB
VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Gate to Source Breakdown Voltage
‐25
VGS(off)
Gate to Source Cutoff Voltage
‐1
IDSS
Gate to Source Saturation Current
6
IGSS
Gate Leakage Current3
IG
Gate Operating Current
TYP.
MAX.
‐3.5
‐6
15
30
‐1
‐500
‐1
‐500
gfs
Forward Transconductance
4.5
6
9
gos
Output Conductance
70
200
CISS
Input Capacitance
3
CRSS
Reverse Transfer Capacitance
1
en
Equivalent Input Noise Voltage
4
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
Available Packages:
U440 in TO-71
U440 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
UNITS
V
V
mA
pA
pA
mS
µS
pF
pF
nV/√Hz
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 5mA
VDS = 10V, ID= 5mA, f = 1kHz
VDS = 10V, ID = 5mA, f = 1MHz
VDS = 10V, ID = 5mA, f = 10kHz
TO-71 (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.