U423_SOT-23 Datasheet, PDF (1/1 Pages) Micross Components – high input impedance Monolithic Dual N-Channel JFET

U423
HIGH INPUT IMPEDANCE
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U423
The U423 is a high input impedance Monolithic Dual N-Channel JFET
The U423 monolithic dual n-channel JFET is designed
to provide very high input impedance for differential
amplification and impedance matching. Among its
many unique features, this series offers operating gate
current specified at -250 fA. The U423 is a direct
replacement for discontinued Siliconix U423.
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
I_G = 0.25pA MAX
gfs = 120µmho MIN
V_GS(OFF) = 2V MAX
The 6 Pin SOT-23 package provides ease of
manufacturing, and a lower cost assembly option.
(See Packaging Information).
U423 Applications:
ƒ Ultra Low Input Current Differential Amps
ƒ High-Speed Comparators
ƒ Impedance Converters
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV_GSS
Breakdown Voltage
40
Click ^BVGGO
Gate‐To‐Gate Breakdown
40
TRANSCONDUCTANCE
Y_fSS
Full Conduction
300
Y_fS
Typical Operation
120
DRAIN CURRENT
I_DSS
Full Conduction
60
GATE VOLTAGE
V_GS(off)
Pinchoff voltage
‐‐
V_GS
Operating Range
‐‐
GATE CURRENT
I_Gmax.
Operating
‐‐
‐I_Gmax.
High Temperature
‐‐
I_GSSmax.
At Full Conduction
‐‐
‐I_GSSmax.
High Temperature
‐‐
OUTPUT CONDUCTANCE
Y_OSS
Full Conduction
‐‐
Y_OS
Operating
‐‐
COMMON MODE REJECTION
CMR
‐20 log | ∆V _GS1‐2/ ∆V_DS|
‐‐
‐20 log | ∆V _GS1‐2/ ∆V_DS|
‐‐
NOISE
NF
Figure
‐‐
e_n
Voltage
‐‐
‐‐
CAPACITANCE
C_ISS
Input
‐‐
C_RSS
Reverse Transfer
‐‐
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐V_GSS
Gate Voltage to Drain or Source
‐V_DSO
Drain to Source Voltage
‐I_G(f)
Gate Forward Current
Maximum Power Dissipation
40V
40V
10mA
Device Dissipation @ Free Air – Total
400mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
|∆V _GS1‐2 /∆T|max.
| V _GS1‐2 | max.
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
40 µV/°C V_DG=10V, I_D=30µA
T_A=‐55°C to +125°C
25
mV V_DG=10V, I_D=30µA
TYP.
MAX.
UNITS
CONDITIONS
60
‐‐
V
V_DS = 0
I_G =1nA
To Buy ^‐‐
‐‐
‐‐
1500
200
350
V
µmho
µmho
I_G = 1µA
V_DS = 10V
V_DG = 10V
I_D = 0
I_S= 0
V_GS = 0V f = 1kHz
I_D = 30µA f = 1kHz
‐‐
1000
µA
V_DS = 10V
V_GS = 0V
‐‐
2.0
V
‐‐
1.8
V
V_DS = 10V
V_DG = 10V
I_D = 1nA
I_D = 30µA
‐‐
.25
‐‐
250
‐‐
1.0
‐‐
1.0
pA
V_DG = 10V
I_D = 30µA
pA
T_A = +125°C
pA
V_DS = 0V
V_GS = 20V
nA
T_A = +125°C
‐‐
10
0.1
3.0
µmho
µmho
V_DS = 10V
V_DG = 10V
V_GS = 0V
I_D = 30µA
90
‐‐
90
‐‐
‐‐
1
20
70
10
‐‐
dB
dB
dB
nV/√Hz
∆V_DS = 10 to 20V
∆V_DS = 5 to 10V
I_D = 30µA
I_D = 30µA
V_DG = 10V I_D = 30µA R_G = 10MΩ
f = 10Hz
V_DG = 10V I_D = 30µA f = 10Hz
V_DG = 10V I_D = 30µA f = 1KHz
‐‐
3.0
pF
‐‐
1.5
pF
V_DS= 10V V_GS = 0 f = 1MHz
Available Packages:
Micross Components Europe
LSU423 in SOT-23
LSU423 available as bare die
Please contact Micross for full package and die dimensions
Email: [e-mail]
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
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