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U309_TO-18 Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET | |||
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U309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The U309 is a high frequency n-channel JFET offering a
wide range and low noise performance. The
hermetically sealed TO-18 package is well suited for
high reliability and harsh environment applications.
(See Packaging Information).
U309 Benefits:
 High Power Low Noise gain
 Dynamic Range greater than 100dB
 Easily matched to 75⦠input
U309 Applications:
 UHV / VHF Amplifiers
 Mixers
 Oscillators
FEATURES
DIRECT REPLACEMENT FOR SILICONIX U309
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS @ 25°C1
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
Gpg = 11.5dB
NF = 2.7dB
â55°C to +150°C
â55°C to +135°C
500mW
10mA
â25V
U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
BVGSS
Gate to Source Breakdown Voltage
â25
ââ
VGS(F)
Gate to Source Forward Voltage
0.7
ââ
VGS(off)
IDSS
Gate to Source Cutoff Voltage
â1
ââ
Drain to Source Saturation Current2
12
ââ
IG
Gate Operating Current (Note 3)
ââ
â15
rDS(on)
Drain to Source On Resistance
ââ
35
MAX
ââ
1
â4
30
ââ
ââ
Click To U309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
gfs
Forward Transconductance
10
14
ââ
gos
Output Conductance
ââ
110
250
Ciss
Input Capacitance
ââ
4
5
Crss
Reverse Transfer Capacitance
ââ
1.9
2.5
en
Equivalent Noise Voltage
6
ââ
ââ
U309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP
NF
Noise Figure
f = 105MHz
ââ
1.5
f = 450MHz
ââ
2.7
Gpg
Power Gain3
f = 105MHz
ââ
16
f = 450MHz
ââ
11.5
gfg
Forward Transconductance f = 105MHz
ââ
14
f = 450MHz
ââ
13
gog
Output Conductance
f = 105MHz
ââ
0.16
f = 450MHz
ââ
0.55
MAX
ââ
ââ
ââ
ââ
ââ
ââ
ââ
ââ
Note 1 â Absolute maximum ratings are limiting values above which U309 serviceability may be impaired.
Note 2 â Pulse test : PW ⤠300µs, Duty Cycle ⤠3%
Note 3 â Measured at optimum input noise match
Micross Components Europe
Available Packages:
U309 in TO-18
U309 in bare die.
UNIT
V
mA
pA
Ω
CONDITIONS
VDS = 0V, IG = â1µA
VDS = 0V, IG = 10mA
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VDG = 9V, ID = 10mA
VGS = 0V, ID = 1mA
Buy UNIT
mS
µS
pF
CONDITIONS
VDS = 10V, ID = 10mA , f = 1kHz
VDS = 10V, VGS = â10V , f = 1MHz
nV/âHz
VDS = 10V, ID = 10mA , f = 100Hz
UNIT
dB
dB
CONDITIONS
VDS = 10V, ID = 10mA
mS
TO-18 (Bottom View)
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
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