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U308_TO-18 Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET
U308
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U308
The U308 is a high frequency n-channel JFET offering a
wide range and low noise performance. The
hermetically sealed TO-18 package is well suited for
high reliability and harsh environment applications.
(See Packaging Information).
U308 Benefits:
ƒ High Power Low Noise gain
ƒ Dynamic Range greater than 100dB
ƒ Easily matched to 75Ω input
U308 Applications:
ƒ UHV / VHF Amplifiers
ƒ Mixers
ƒ Oscillators
FEATURES
DIRECT REPLACEMENT FOR SILICONIX U308
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS @ 25°C1
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
Gpg = 11.5dB
NF = 2.7dB
‐55°C to +150°C
‐55°C to +135°C
500mW
10mA
‐25V
U308 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
BVGSS
Gate to Source Breakdown Voltage
‐25
‐‐
VGS(F)
Gate to Source Forward Voltage
0.7
‐‐
VGS(off)
IDSS
Gate to Source Cutoff Voltage
‐1
‐‐
Drain to Source Saturation Current2
12
‐‐
IG
Gate Operating Current (Note 3)
‐‐
‐15
rDS(on)
Drain to Source On Resistance
‐‐
35
MAX
‐‐
1
‐6.5
60
‐‐
‐‐
Click To U308 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
gfs
Forward Transconductance
8
14
‐‐
gos
Output Conductance
‐‐
110
250
Ciss
Input Capacitance
‐‐
4
5
Crss
Reverse Transfer Capacitance
‐‐
1.9
2.5
en
Equivalent Noise Voltage
6
‐‐
‐‐
U308 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP
NF
Noise Figure
f = 105MHz
‐‐
1.5
f = 450MHz
‐‐
2.7
Gpg
Power Gain3
f = 105MHz
‐‐
16
f = 450MHz
‐‐
11.5
gfg
Forward Transconductance f = 105MHz
‐‐
14
f = 450MHz
‐‐
13
gog
Output Conductance
f = 105MHz
‐‐
0.16
f = 450MHz
‐‐
0.55
MAX
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
Note 1 ‐ Absolute maximum ratings are limiting values above which U308 serviceability may be impaired.
Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%
Note 3 ‐ Measured at optimum input noise match
Micross Components Europe
Available Packages:
U308 in TO-18
U308 in bare die.
UNIT
V
mA
pA
Ω
CONDITIONS
VDS = 0V, IG = ‐1µA
VDS = 0V, IG = 10mA
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VDG = 9V, ID = 10mA
VGS = 0V, ID = 1mA
Buy UNIT
mS
µS
pF
CONDITIONS
VDS = 10V, ID = 10mA , f = 1kHz
VDS = 10V, VGS = ‐10V , f = 1MHz
nV/√Hz
VDS = 10V, ID = 10mA , f = 100Hz
UNIT
dB
dB
CONDITIONS
VDS = 10V, ID = 10mA
mS
TO-18 (Bottom View)
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx