SST177 Datasheet, PDF (1/1 Pages) Micross Components – Linear Systems replaces discontinued Siliconix SST177

SST177
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST177
The SST177 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching. When used in
combination with the complimentary J/SST111 n-
channel family, the SST177 simplifies series-shunt
switching applications
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TO-92
Circuit
package provides
Performance
a
 Negligible “Off-Error,” Excellent Accuracy
 Good Frequency Response
 Eliminates Additional Buffering
SST177 Applications:
FEATURES  
DIRECT  REPLACEMENT  FOR  SILICONIX  SST177  
LOW  ON  RESISTANCE  
LOW  GATE  OPERATING  CURRENT  
FAST  SWITCHING  
ABSOLUTE  MAXIMUM  RATINGS    
@  25°C  (unless  otherwise  noted)  
Maximum  Temperatures  
Storage  Temperature  
Operating  Junction  Temperature  
Maximum  Power  Dissipation  
Continuous  Power  Dissipation    
MAXIMUM  CURRENT
r_{DS(on) Â} â‰¤  300Ω  
I_{D(off) Â} =  10pA  
t_(ON)  25ns  
-­‐55°C  to  +150°C  
-­‐55°C  to  +135°C  
350mW  
 Analog Switches
 Choppers
 Sample-and-Hold
 Normally “On” Switches
 Current Limiters
Gate  Current  (Note  1)  
MAXIMUM  VOLTAGES  
Gate  to  Drain  Voltage  
Gate  to  Source  Voltage  
 
 
I_G  =  -­‐50mA  
V_GDS  =  30V  
V_GSS  =  30V  
 
 
 
SST177  ELECTRICAL  CHARACTERISTICS  @  25°C  (unless  otherwise  noted)
SYMBOL  
CHARACTERISTIC  
MIN   TYP.  
MAX  
UNITS  
CONDITIONS  
BV_GSS  
V_GS(F)  
V_GS(off)  
I_DSS  
Gate  to  Source  Breakdown  Voltage   30  
-­‐-­‐  
Gate  to  Source  Forward  Voltage  
-­‐-­‐  
-­‐0.7  
Gate  to  Source  Cutoff  Voltage  
0.8  
-­‐-­‐  
Drain  to  Source  Saturation  Current   -­‐1.5  
-­‐-­‐  
-­‐-­‐  
-­‐-­‐  
2.25  
-­‐20  
 
I_{G Â} =  -­‐1µA,      V_DS  =  0V  
V  
                                     I_{G Â} =  -­‐1mA,      V_DS  =  0V  
 
V_DS  =  -­‐15V,  I_D  =  -­‐10nA  
V_DS  =  -­‐15V,  V_{GS Â} =  0V  
I_GSS  
Gate  Reverse  Current  
-­‐-­‐  
0.01  
1  
 
I_G  
Gate  Operating  Current  
-­‐-­‐  
0.01  
-­‐-­‐  
nA  
I_D(off)  
Drain  Cutoff  Current  
-­‐-­‐  
-­‐0.01  
-­‐1  
 
r_DS(on)  
Drain  to  Source  On  Resistance  
-­‐-­‐  
-­‐-­‐  
300  
Ω  
 
 
 
 
 
 
V_{GS Â} =  20V,    V_DS  =  0V  
V_{DG Â} =  -­‐15V,    I_D  =  -­‐1mA  
V_DS  =  -­‐15V,  V_{GS Â} =  0V  
V_{GS Â} =  0V,    V_DS  =  -­‐0.1V  
 
SST177  SWITCHING  CHARACTERISTICS  @  25°C  (unless  otherwise  noted)  
SYMBOL  
CHARACTERISTIC  
 
UNITS  
CONDITIONS  
t_d(on)  
t_r  
t_d(off)  
Turn  On  Time  
Turn  On  Rise  Time  
Turn  Off  Time  
10  
 
15  
 
ns  
10  
t_f  
Turn  Off  Fall  Time  
20  
Note  1  -­‐    Absolute  maximum  ratings  are  limiting  values  above  which  SST177  servicea b  ility  may  be  impaired.
V_GS(L)  =  0V  
 V_GS(H)  =  10V  
 
See  Switching  Circuit  
SST177  SWITCHING  CIRCUIT  PARAMETERS                                         _S      _O        _T     _-    ₂     ₃        ₍    _T     _o     _p       _V      _i  _e      _w       ₎                                                                                                                                                    SWITCHING  CIRCUIT  
V_DD  
-­‐6V  
 
V_GG  
5V  
 
R_L  
5600Ω  
 
R_G  
390Ω  
 
I_D(on)  
-­‐1mA  
 
 
 
 
Micros _ s Components E _  urope _ 
 
 
 
Available Packages:
 
 
 
 
 
 
SST177 in SOT-23
SST177 in bare die.
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
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Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Email: [e-mail] Web: www.micross.com/distribution.aspx