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SD213DE Datasheet, PDF (1/1 Pages) Micross Components – N-Channel Lateral DMOS Switch - Zener Protected | |||
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SD211 / 213 / 215
SD211DE / SD213DE / SD215DE N-Channel Lateral DMOS Switch - Zener Protected
Description:
The SD211DE / SD213DE / SD215DE are enhancementâmode
MOSFETs designed for high speed lowâglitch switching in audio, video
and highâfrequency applications. The family is normally used for ±5V
analog switching or as a high speed driver of the SD214. These
MOSFETs utilize lateral construction to achieve low capacitance and
ultraâfast switching speeds. An integrated Zener diode provides ESD
protection A polyâsilicon gate is featured for manufacturing reliability.
See SD5000 and SD54000 series for quad configurations.
For nonâzener protected versions see SD210DE / SD214DE series
Features:
 UltraâHigh Speed SwitchingâtON: 1ns
 UltraâLow Reverse Capacitance: 0.2pF
 Low Guaranteed RDS @5V
 Low TurnâOn Threshold Voltage (1.5V max)
 NâChannel Enhancement Mode
Benefits:
 HighâSpeed System Performance
 Low Insertion Loss at High Frequencies
 Low Transfer Signal Loss
 Single Supply Operation & Simple Driver Requirement
Availability:
SD211DE / SD213DE / SD215DE â TOâ72 , â55°C to 125°C
SD211DE / SD213DE / SD215DE â Bare die form
Contact Micross for full package dimensions
Pinout:
Top View
Applications:
 Fast Analog Switching
 Fast Sample & Holds
 PixelâRate Switching
 DAC Deglitchers
 HighâSpeed Driver
MAXIMUM RATINGS
LIMIT IN VOLTS
MAXIMUM RATINGS
LIMIT
UNIT
SD211 SD213 SD215
(Continued)
GateâDrain, GateâSource Voltage â30/25 â15/25 â25/30
Drain Current
50
mA
GateâSubstrate Voltage
â0.3/25 â0.3/25 â0.3/30
Lead Temperature (1/16â from ease, 10s)
300
°C
DrainâSource Voltage
30
10
20
Storage Temperature
â65 to 150 °C
SourceâDrain Voltage
10
10
20
Operating Junction Temperature
â55 to 125 °C
Drain âSubstrate Voltage
30
15
25
Power Dissipation
Click To Buy SourceâSubstrate Voltage
15
15
25
ELECTRICAL SPECIFICATION
TA = 25°C unless otherwise noted
SYMBOL
TEST CONDITIONS
Derate 3mW/C° above 25°C
300
LIMITS
TYP SD211DE
SD213DE
SD215DE
MIN MAX MIN MAX MIN MAX
mW
UNIT
DRAINâSOURCE BREAKDOWN
VOLTAGE
V(BR)DS
VGS = VBS = 0V, ID = 10µA 35 30
â
â
â
â
â
VGS = VBS = â5V, ID = 10nA 30 10
â
10
â
20
â
SOURCEâDRAIN BREAKDOWN
V(BR)SD
VGD = VBD = â5V, IS = 10nA 22 10
â
10
â
20
â
VOLTAGE
V
DRAINâSUBSTRATE BREAKDOWN
V(BR)DBO
VGB = 0V, ID = 10nA
35 15
â
15
â
25
â
VOLTAGE
Source Open
SOURCEâSUBSTRATE BREAKDOWN
VOLTAGE
V(BR)SBO
VGB = 0V, IS = 10µA
Drain Open
35 15
â
15
â
25
â
DRAINâSOURCE LEAKAGE
SOURCEâDRAIN LEAKAGE
GATE LEAKAGE
IDS(off)
VGS=VBS =â5V VDS = 10V 0.4
â
10
â
10
â
â
VDS = 20V 0.9 â
â
â
â
â
10
ISD(off)
VGD =VBD=â5V VSD = 10V 0.5
â
10
â
10
â
â
nA
VSD = 20V 1
â
â
â
â
â
10
IGBS
VDB = VSB = 0V , VGB = 30V 0.01 â
100
â
100
â
100
THRESHOLD VOLTAGE
VGS(th)
VDS =VGS , ID = 1µA, VSB = 0V 0.8 0.5
1.5
0.1
1.5
0.1
1.5
V
VGS = 5V 58
â
70
â
70
â
70
VGS = 10V 38
â
45
â
45
â
45
DRAINâSOURCEâON RESISTANCE
RDS(on)
VSB = 0V
VGS = 15V 30
â
â
â
â
â
â
â¦
ID = 1mA VGS = 20V 26
â
â
â
â
â
â
VGS = 25V 24
â
â
â
â
â
â
FORWARD TRANSCONDUCTANCE
gfs
VDS = 10V , VSB = 0V
11 10
â
10
â
â
10
mS
gos
ID = 20mA, f = 1kHz
0.9 â
â
â
â
â
9
GATE NODE CAPACITANCE
C(GS+GD+GB)
2.5 â
3.5
â
3.5
â
3.5
DRAIN NODE CAPACITANCE
C(GD+GB)
VDS = 10V , f = 1MHz
1.1 â
1.5
â
1.5
â
1.5
pF
SOURCE NODE CAPACITANCE
C(GS+SB)
VGS = VBS = â15V
3.7 â
5.5
â
5.5
â
5.5
REVERSE TRANSFER CAPACITANCE
Crss
0.2 â
0.5
â
0.5
â
0.5
TURNâON TIME
tD(on)
0.5 â
1
â
1
â
1
tr
VSB = 0V, VIN 0 to 5V,
0.6 â
1
â
1
-
1
ns
TURNâOFF TIME
tD(off)
RG = 25â¦, VDD = 5V RL =
2
â
â
â
â
-
-
This is trial version tf
680â¦
6
â
â
â
â
-
-
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents
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Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com
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