MYXJ11000-17DA0 Datasheet, PDF (1/4 Pages) –

Silicon Carbide JFET Normally On
1000 Volt 17 Amp Hermetic SMD
MYXJ11000-17DA0
Product Overview
Features Benefits _{• High voltage 1000V-Recommend under fill at}
y _{board assembly to maintain isolation.}
r _{• High current 17A}
a _{• High temperature 175°C}
• BeO free and RoHS compliant
Applicⁱaⁿtions _{• HMP solder tinned leads available}
• Silicon Carbide (SiC) JFET exhibits low on resistance
R_DS(On) and superior high temperature performance
lim ^{• Extremely fast switching}
• Screening options available
re ^{ºº Commercial high temperature}
ºº In accordance with MIL-PRF-19500
P ^{ºº Other options available on request}
• Low on resistance R_DS(On)
• Voltage controlled
• Low gate charge
• Low intrinsic capacitance
• Harsh environment motor drive
• Harsh environment inverter
• Switch power supplies
• Power factor correction modules
• Induction heating
• Surface mount
• Other packaging options available
Absolute Maximum Ratings
Symbols
V_R
V_GS
I_D
I_DM
I_FSM
P_D
T_J & T_stg
T_L
Parameters
DC Reverse Voltage
Gate Source Voltage
Continuous Drain Current
Pulsed Drain Current (T_p=10ms, Half Sine Wave)
Surge Peak Forward Current (T_p=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range & Storage Temperature Range
Soldering Temperature (Time =5 Seconds)
Figure 1: SMD 0.5
Pad 1
Pad 3
Pad 2 ( Large Pad)
Figure 2: Circuit Diagram
Values
1000
-30 to + 3
17
50
45
93.7
-55 to +175
250
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
1.6
Units
o_{C / Watt}
March 2014 Rev 1.0
1
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