MYXDS1200-15ABS Datasheet, PDF (1/3 Pages) –

Silicon Carbide Schottky Diode
1200 Volt 15 Amp Hermetic
MYXDS1200-15ABS
Product Overview
Features Benefits _{y • High voltage 1200V isolation in a small package}
r _outline
a _{• High current 15A}
• High temperature 210°C
Appl^{in • BeO free and RoHS compliant}
ications _{• HMP solder tinned leads available}
lim ^{• Electrically isolated flange}
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
re ^performance
• No reverse recovery time
P • Screening options available
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
• Harsh environment motor drive
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other package options available
Absolute Maximum Ratings*
Symbols
V_R
V_RRM
I_F(AVG)
I_FRM
I_FSM
P_D
T_J
T_stg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (T_p=10ms, Half Sine Wave)
Surge Peak Forward Current (T_p=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-257 Domed Lid
Case
Pin1 Pin2 Pin3
Figure 2: Circuit Diagram
Values
1200
1200
15
59
130
24
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
7.7
Units
o_{C / Watt}
March 2014 Rev 1.0
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) [phone] • [e-mail] • www.micross.com