MYXDS1200-10ABS Datasheet, PDF (1/3 Pages) –

Silicon Carbide Schottky Diode
1200 Volt 10 Amp Hermetic
MYXDS1200-10ABS
Product Overview_{y Features}
r _{• High voltage 1200V isolation in a small package}
a _outline
• High current 10A
in _{• High temperature 210°C}
• BeO free and RoHS compliant
lim ^{• HMP solder tinned leads available}
• Electrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
re ^{forward voltage and superior high temperature}
performance
P • No reverse recovery time
Benefits
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
Applications
• Harsh environment motor drive
• Harsh environment regulators
• Screening options available
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings
Symbols
V_R
V_RRM
I_F(AVG)
I_FRM
I_FSM
P_D
T_J
T_stg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current ( T_p=10ms, Half Sine Wave)
Surge Peak Forward Current ( T_p=10μs, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-257 Domed Lid
Case
Pin1 Pin2 Pin3
Figure 2: Circuit Diagram
Values
1200
1200
10
50
250
16.8
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
11
Units
o_{C / Watt}
1
March 2014 Rev 1.0
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