MYXDS1200-03ABS Datasheet, PDF (1/3 Pages) –

Silicon Carbide Schottky Diode
1200 Volt 3 Amp Hermetic
MYXDS1200-03ABS
Product Overview
Features Benefits _{y • High voltage 1200V isolation in a small package}
r _outline
• High current 3A
a _{• High temperature 210°C}
Appl^{in • BeO free and RoHS compliant}
ications _{• HMP solder tinned leads available}
• Electrically isolated flange
lim • Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
re _{• No reverse recovery time}
P ^{• Screening options available}
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
• Harsh environment motor drive
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings
Symbols
V_R
V_RRM
I_F(AVG)
I_FRM
I_FSM
P_D
T_J
T_stg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current (no AC component)
Repetitive Peak Forward Current (T_p=10ms, Half Sine Wave)
Surge Peak Forward Current (T_p=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-257 Domed Lid
Case
Pin1 Pin2 Pin3
Figure 2: Circuit Diagram
Values
1200
1200
3
26
46
9.4
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
19.8
Units
o_{C / Watt}
March 2014 Rev 1.0
1
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