|
MYXDS0600-10DA0 Datasheet, PDF (1/3 Pages) – | |||
|
Silicon Carbide Schottky Diode
600 Volt 10 Amp Hermetic SMD
MYXDS0600-10DA0
Product Overview
Features Benefits y ⢠High voltage 600V isolation in a small package outline
r ⢠High current 10A
a ⢠High temperature 210°C
Appliicn ⢠BeO free and RoHS compliant
ations ⢠HMP solder tinned leads available
⢠Electrically isolated flange
lim ⢠Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
re ⢠No reverse recovery time
⢠Screening options available
P ºº Commercial high temperature
⢠Essentially no switching losses
⢠Higher efficiency
⢠High reliability
⢠Harsh environment motor drive
⢠Harsh environment regulators
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
⢠Surface mount
⢠Other packaging options available
Absolute Maximum Ratings*
Symbols
VR
VRRM
IF(AVG)
IFRM
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
Surge Peak Forward Current (Tp=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: SMD 0.5
Pad 1
Pad 3
Pad 2
Figure 2: Circuit Diagram
Values
600
600
10
67
90
45
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
4.1
Units
oC / Watt
1
March 2014 Rev 1.0
Micross US (Americas) 407.298.7100 ⢠Micross UK (EMEA & ROW) +44 (0) 1603 788967 ⢠sales@micross.com ⢠www.micross.com
|
▷ |