MYXDS0600-05DA0 Datasheet, PDF (1/3 Pages) –

Silicon Carbide Schottky Diode
600 Volt 5 Amp Hermetic SMD
MYXDS0600-05DA0
Product Overview
Features Benefits _{y • High voltage 600V isolation in a small package outline}
r _{• High current 5A}
a _{• High temperature 210°C}
Applⁱic^{n • BeO free and RoHS compliant}
ations _{• HMP solder tinned leads available}
• Electrically isolated flange
lim • Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
re ^{• No reverse recovery time}
• Screening options available
P _{ºº Commercial high temperature}
• Essentially no switching losses
• Higher efficiency
• High reliability
• Harsh environment motor drive
• Harsh environment regulators
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Surface mount
• Other packaging options available
Absolute Maximum Ratings*
Symbols
V_R
V_RRM
I_F(AVG)
I_FRM
I_FSM
P_D
T_J
T_stg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current ( T_p=10ms, Half Sine Wave)
Surge Peak Forward Current (T_p=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: SMD 0.5
Pad 1
Pad 3
Pad 2
Figure 2: Circuit Diagram
Values
600
600
5
26.3
45
29.4
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
6.3
Units
o_{C / Watt}
March 2014 Rev 1.0
1
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