MYXDS0600-03DA0 Datasheet, PDF (1/3 Pages) Micross Components – High current 3A

Silicon Carbide Schottky Diode
600 Volt 3 Amp Hermetic SMD
MYXDS0600-03DA0
Product Overview
Features Benefits _{y • High voltage 600V isolation in a small package outline}
r _{• High current 3A}
• High temperature 210°C
a _{• BeO free and RoHS compliant}
Appl_iicⁿations _{• HMP solder tinned leads available}
• Electrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
lim ^{forward voltage and superior high temperature}
performance
• No reverse recovery time
re • Screening options available
ºº Commercial high temperature
P _{ºº In accordance with MIL-PRF-19500}
• Essentially no switching losses
• Higher efficiency
• High reliability
• Harsh environment motor drive
• Harsh environment regulators
ºº Other options available on request
• Surface mount
• Other packaging options available
Absolute Maximum Ratings
Symbols
V_R
V_RRM
I_F(AVG)
I_FRM
I_FSM
P_D
T_J
T_stg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (T_p=10ms, Half Sine Wave)
Surge Peak Forward Current (T_p=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: SMD 0.5
Pad 1
Pad 3
Pad 2
Figure 2: Circuit Diagram
Values
600
600
3
22
31.9
12
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
15.4
Units
o_{C / Watt}
March 2014 Rev 1.0
1
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