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MYXDB0600-10CEN Datasheet, PDF (1/3 Pages) Micross Components – High current 10A | |||
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SiC Schottky Diode Rectifier Bridge
600 Volt 10 Amp Hermetic
MYXDB0600-10CEN
Product Overview
Features Benefits ry ⢠High voltage 600V isolation
a ⢠High current 10A
⢠High temperature 210°C
in ⢠BeO free and RoHS compliant
⢠HMP solder tinned leads available
limApplications ⢠Electrically isolated flange
⢠Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
re performance
⢠No reverse recovery time
P ⢠Screening options available
⢠Essentially no switching losses
⢠Higher efficiency
⢠Reduction of heat sink requirements
⢠Harsh environment rectification
⢠Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
⢠Other packaging options available
Absolute Maximum Ratings* (Per single diode)
Symbols
VR
VRRM
IF(AVG)
IFRM
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
Surge Peak Forward Current (Tp=10µs, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-258 5 PIN
Case
NC
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5
- ~ NC ~ +
Figure 2: Circuit Diagram
Values
600
600
10
60
100
29
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
1.6
Units
oC / Watt
1
March 2014 Rev 1.0
Micross US (Americas) 407.298.7100 ⢠Micross UK (EMEA & ROW) +44 (0) 1603 788967 ⢠sales@micross.com ⢠www.micross.com
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