MYXD30600-10CEN Datasheet, PDF (1/3 Pages) Micross Components – 6 off high current 10A diodes

SiC Schottky 3 Phase Diode Bridge
600 Volt 10 Amp Hermetic
MYXD30600-10CEN
Product Overview
Features Benefits _{y • High voltage 600V isolation}
r _{• 6 off high current 10A diodes}
a _{• High temperature 210°C}
Appl^{in • BeO free and RoHS compliant}
• HMP solder tinned leads available
ications _{• Electrically isolated flange}
lim • Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
re ^{• No reverse recovery time}
• Screening options available
P _{ºº Commercial high temperature}
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
• Harsh environment rectification
• Harsh environment regulators
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings (Per Diode)*
Symbols
V_R
V_RRM
I_F(AVG)
I_FRM
I_FSM
P_D
T_J
T_stg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (T_p=10ms, Half Sine Wave)
Surge Peak Forward Current (T_p=10µs, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-258 5 PIN
Case
NC
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5
- ~ ~~+
Figure 2: Circuit Diagram
Values
600
600
10
60
100
28
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
o_C
o_C
Thermal Properties
Symbols
R_θJC
Parameters
Thermal Resistance, Junction To Case
Values
1.1
Units
o_{C / Watt}
March 2014 Rev 1.0
1
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