MYXB21200-20GAB Datasheet, PDF (1/4 Pages) Micross Components – Two devices in one hermetic package

SiC Power BJT Double
1200 Volt 20 Amp Hermetic
MYXB21200-20GAB
Product Overview
Features Benefits _{• Two devices in one hermetic package.}
y • High voltage 1200V isolation in a small package
outline
r _{• High current 20A}
a _{• High temperature 210OC}
Appl_iicⁿations _{• RoHS compliant}
• HMP solder tinned leads available
• Electrically isolated flange / case
lim • Silicon Carbide (SiC) device, gives a superior high
temperature performance
• Fast temperature independent switching
re _{• Screening options available}
P ^{ºº Commercial high temperature}
• High speed switching with low capacitance
• High blocking voltage with low R_(on)
• Reduction of heat sink requirements
• Harsh environment motor drive
• Harsh environment inverter
• Induction heater
• DC-DC converters
• Aerospace power electronics
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Excellent capability to withstand short circuit
Absolute Maximum Ratings* (Per single device)
Figure 1: TO-259 (6 PIN)
Pin6 Pin5 Pin4
Pin1 Pin2 Pin3
Figure 2: Circuit Diagram
Symbols
V_CEO
V_EC
V_CBO
V_EC
I_C
I_CM
I_B
I_BM
T_stg
T_J
P_TOT
Parameters
Drain Source Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Emitter-Base Voltage
Constant Collector Current
Pulsed Collector Current (t_p < 10ms)
Constant Base Current (DC)
Pulsed Base Current (t_p < 10ms)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation
Values
1200
30
1200
30
20
40
3
6
-55 to 210
210
154
Units
V
A
°C
W
Thermal Properties
Symbols
Parameters
Values
Units
R_θJC
Thermal Resistance, Junction To Case
1
March 2014 Rev 1.0
1.2
o_{C / Watt}
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) [phone] • [e-mail] • www.micross.com