MYX29W640GB70ZABG Datasheet, PDF (1/56 Pages) Micross Components – Asynchronous random/page read

64Mb: 3V Embedded Parallel NOR Flash
MYX29W640GB70ZABG
64Mb: 3V Parallel NOR Flash Embedded Memory
Features
• Supply voltage
• V_CC = 2.7–3.6V (program, erase, read)
• V_PP = 12V for fast program (optional)
• Asynchronous random/page read
• Page width: 4 words
• Page access: 25ns
• Random access: 70ns
• Fast program commands
• 2-word/4-byte program (without V_PP = 12V)
• 4-word/8-byte program (with V_PP = 12V)
• 16-word/32-byte write buffer
• Programming time
• 10μs per byte/word TYP
• Chip program time: 10 s (4-word program)
• Double word/quadruple byte program
• Memory organization
• M29W640GB 127 main blocks, 64KB each and 8
boot blocks, 8KB each
• Program/erase controller
• Embedded byte/word program algorithms
• Program/erase suspend and resume
• Read from any block during a PROGRAM
SUSPEND operation
• Read or program another block during an ERASE
SUSPEND operation
• Hardware block protection
• V_PP/WP# pin for fast program and write protect
• Temporary block unprotect mode
• Common Flash interface
• 64-bit security code
• 128-word extended memory block
• Extra block used as security block or to store
additional information
• Low power consumption: Standby and automatic mode
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
• Manufacturer code: 0020h
• Device summary: part number and device code
• M29W640GB: bottom boot block
227Eh + 2210h + 2200h
OptionsCode
• Package (Sn63 Pb37 solder)
BG
ƒƒ Package (Sn63 Pb37 solder)
48-ball TFBGA (6mm x 8mm)
0.8mm pitch
ZA
ƒƒ Operating Temperature
Industrial (-40°C ≤ Ta ≤ +85°C)
IT
• Part Marking Label (L), or Dot (D)
MYX29W640GB70ZABG
Revision 1.0 - 04/13/16
1
Form #: CSI-D-685 Document 007