MIMMD200S160B Datasheet, PDF (1/2 Pages) Micross Components – 1600V 200A Rectifier Diode Module RoHS Compliant

PRODUCT FEATURES
· Glass Passivated Chip
· Aluminum Oxide Ceramic Isolated Metal Baseplate
· Low Reverse Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Inductance Package
MIMMD200S160B
1600V 200A Rectifier Diode Module
RoHS Compliant
APPLICATIONS
· Field Supply For DC Motors
· Line Rectifiers For Transistorized AC Motor Controllers
· Non-controllable Rectifiers For AC/DC Converter
ABSOLUTE MAXIMUM RATINGS
T_C=25°C unless otherwise specified
Symbol
V_RRM
I_F(AV)
I_F(RMS)
I_FSM
Parameter
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
I²t
I²t (For Fusing)
P_D
T_J
T_STG
Power Dissipation
Junction Temperature
Storage Temperature Range
Test Conditions
T_C=85°C Rectangular, d=0.5
T_C=85°C Rectangular, d=0.5
T_J=45°C, t=10ms, 50Hz, Sine
T_J=45°C,t=8.3ms, 60Hz, Sine
T_J=45°C, t=10ms, 50Hz, Sine
T_J=45°C,t=8.3ms, 60Hz, Sine
Max.
Unit
1600
V
200
A
290
A
7000
A
7700
A
245000
A²s
296450
A²s
781
W
-40 to +150
°C
-40 to +125
°C
V_isol
Weight
Insulation Test Voltage
AC, 50Hz, t=1min
3000
V
161
g
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
I_RM
Reverse Leakage Current
V_F
Forward Voltage
R_θJC
Thermal Resistance
Test Conditions
V_R=1600V
V_R=1600V, T_J=125°C
I_F=500A
I_F=500A, T_J=125°C
Junction-to-Case
T_C=25°C unless otherwise specified
Min. Typ. Max. Unit
--
--
500
µA
--
--
10
mA
-- 1.3 1.55
V
-- 1.25
--
V
--
--
0.16 °C /W