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LSU423_PDIP Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET | |||
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LSU423
HIGH INPUT IMPEDANCE
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U423
The LSU423 is a high input impedance Monolithic Dual N-Channel JFET
The LSU423 monolithic dual n-channel JFET is
designed
FEATURES
HIGH INPUT IMPEDANCE
IG = 0.25pA MAX
to provide very high input impedance for differential
HIGH GAIN
gfs = 120µmho MIN
amplification and impedance matching. Among its
many unique features, this series offers operating gate
current specified at -250 fA. The LSU423 is a direct
replacement for discontinued Siliconix U423.
LOW POWER OPERATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
VGS(OFF) = 2V MAX
Maximum Temperatures
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
Storage Temperature
â65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor â Note 1
âVGSS
Gate Voltage to Drain or Source
40V
(See Packaging Information).
âVDSO
âIG(f)
Drain to Source Voltage
Gate Forward Current
40V
10mA
LSU423 Applications:
Maximum Power Dissipation
Device Dissipation @ Free Air â Total
400mW @ +125°C
 Ultra Low Input Current Differential Amps
 High-Speed Comparators
 Impedance Converters
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
|âV GS1â2 /âT|max.
DRIFT VS.
TEMPERATURE
40 µV/°C VDG=10V, ID=30µA
TA=â55°C to +125°C
| V GS1â2 | max.
OFFSET VOLTAGE 25
mV VDG=10V, ID=30µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX.
UNITS
CONDITIONS
BVGSS
Breakdown Voltage
40
60
ââ
V
VDS = 0
IG =1nA
Click BVGGO
GateâToâGate Breakdown
40
TRANSCONDUCTANCE
YfSS
Full Conduction
300
YfS
Typical Operation
120
DRAIN CURRENT
IDSS
Full Conduction
60
To Buy ââ
ââ
ââ
1500
200
350
V
µmho
µmho
IG = 1µA
VDS = 10V
VDG = 10V
ID = 0
IS= 0
VGS = 0V f = 1kHz
ID = 30µA f = 1kHz
ââ
1000
µA
VDS = 10V
VGS = 0V
GATE VOLTAGE
VGS(off)
Pinchoff voltage
ââ
ââ
2.0
V
VDS = 10V
ID = 1nA
VGS
Operating Range
ââ
ââ
1.8
V
VDG = 10V
ID = 30µA
GATE CURRENT
IGmax.
Operating
ââ
ââ
.25
pA
VDG = 10V
ID = 30µA
âIGmax.
High Temperature
ââ
ââ
250
pA
TA = +125°C
IGSSmax.
At Full Conduction
ââ
ââ
1.0
pA
VDS = 0V
VGS = 20V
âIGSSmax.
High Temperature
ââ
ââ
1.0
nA
TA = +125°C
OUTPUT CONDUCTANCE
YOSS
Full Conduction
ââ
ââ
10
µmho
VDS = 10V
VGS = 0V
YOS
Operating
ââ
0.1
3.0
µmho
VDG = 10V
ID = 30µA
COMMON MODE REJECTION
CMR
â20 log | âV GS1â2/ âVDS|
ââ
90
ââ
dB
âVDS = 10 to 20V ID = 30µA
â20 log | âV GS1â2/ âVDS|
ââ
90
ââ
dB
âVDS = 5 to 10V ID = 30µA
NOISE
VDG = 10V ID = 30µA RG = 10MΩ
NF
Figure
ââ
ââ
1
dB
f = 10Hz
en
Voltage
ââ
20
70
nV/âHz
VDG = 10V ID = 30µA f = 10Hz
ââ
10
ââ
VDG = 10V ID = 30µA f = 1KHz
CAPACITANCE
CISS
Input
ââ
ââ
3.0
pF
VDS= 10V VGS = 0 f = 1MHz
CRSS
Reverse Transfer
ââ
ââ
1.5
pF
Note 1 â These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
TO-71 / TO-78 (Top View)
P-DIP / SOIC (Top View)
LSU423 in TO-71 & TO-78
LSU423 in PDIP & SOIC
LSU423 available as bare die
Please contact Micross for full package and die dimensions
Email: chipcomponents@micross.com
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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