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LSU406_TO-71 Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET | |||
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LSU406
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U406 with LSU406
The U406/ LSU406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The LSU406 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU406 features a 5-
mV offset and 10-µV/°C drift. The LSU406 is a direct
replacement for discontinued Siliconix U406.
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
| V GS1â2 / T| = 10µV/°C TYP.
en = 6nV/Hz @ 10Hz TYP.
Vp = 2.5V TYP.
Maximum Temperatures
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications.
Storage Temperature
Operating Junction Temperature
â65°C to +150°C
+150°C
(See Packaging Information).
Maximum Voltage and Current for Each Transistor â Note 1
âVGSS
Gate Voltage to Drain or Source
50V
âVDSO
Drain to Source Voltage
50V
U406 / LSU406 Applications:
âIG(f)
Gate Forward Current
Maximum Power Dissipation
10mA
 Wideband Differential Amps
 High-Speed,Temp-Compensated Single-
Device Dissipation @ Free Air â Total
300mW
Ended Input Amps
 High-Speed Comparators
 Impedance Converters and vibrations
detectors.
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1â2 / T| max.
DRIFT VS.
TEMPERATURE
80 µV/°C VDG=10V, ID=200µA
TA=â55°C to +125°C
| V GS1â2 | max.
OFFSET VOLTAGE 40
mV VDG=10V, ID=200µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX.
UNITS
CONDITIONS
Click BVGSS
BVGGO
YfSS
YfS
Breakdown Voltage
GateâToâGate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
50
±50
2000
1000
To Buy 60
ââ
ââ
ââ
ââ
7000
ââ
2000
V
V
µmho
µmho
VDS = 0
I G= 1nA
ID=1nA
ID= 0
IS= 0
VDG= 10V
VDG= 15V
VGS= 0V f = 1kHz
ID= 200µA f = 1kHz
|YFS1â2 / Y FS|
Mismatch
ââ
0.6
3
%
DRAIN CURRENT
IDSS
Full Conduction
0.5
ââ
10
mA
VDG= 10V
VGS= 0V
|IDSS1â2 / IDSS| Mismatch at Full Conduction
ââ
1
5
%
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
â0.5
ââ
â2.5
V
VDS= 15V
ID= 1nA
VGS(on)
Operating Range
ââ
ââ
â2.3
V
VDS=15V
ID=200µA
GATE CURRENT
âIGmax.
Operating
ââ
â4
â15
pA
VDG= 15V ID= 200µA
âIGmax.
âIGSSmax.
High Temperature
At Full Conduction
ââ
ââ
â10
ââ
ââ
100
nA
TA= +125°C
pA
VDS =0
âIGSSmax.
High Temperature
5
5
5
pA
VDG= 15V TA= +125°C
OUTPUT CONDUCTANCE
YOSS
Full Conduction
ââ
ââ
20
µmho
VDG= 10V
VGS= 0V
YOS
Operating
ââ
0.2
2
µmho
VDG= 15V
ID= 500µA
COMMON MODE REJECTION
CMR
â20 log | V GS1â2/ V DS|
95
ââ
ââ
dB
VDS = 10 to 20V ID=30µA
NOISE
VDS= 15V VGS= 0V RG= 10M
NF
Figure
ââ
ââ
0.5
dB
f= 100Hz NBW= 6Hz
en
Voltage
ââ
20
ââ
nV/âHz
VDS=15V ID=200µA f=10Hz NBW=1Hz
CAPACITANCE
CISS
Input
ââ
ââ
8
pF
VDS= 15V ID= 200µA f= 1MHz
CRSS
Reverse Transfer
ââ
ââ
1.5
pF
Note 1 â These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 / TO-78 (Top View)
Micross Components Europe
Available Packages:
U406 / LSU406 in TO-71 & TO-78
U406 / LSU406 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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