LSU309_TO-18 Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET

LSU309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The LSU309 is a high frequency n-channel JFET
offering a wide range and low noise performance. The
hermetically sealed TO-18 package is well suited for
high reliability and harsh environment applications.
(See Packaging Information).
LSU309 Benefits:
ƒ High Power Low Noise gain
ƒ Dynamic Range greater than 100dB
ƒ Easily matched to 75Ω input
LSU309 Applications:
ƒ UHV / VHF Amplifiers
ƒ Mixers
ƒ Oscillators
FEATURES
DIRECT REPLACEMENT FOR SILICONIX U309
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS @ 25°C¹
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
G_pg = 11.5dB
NF = 2.7dB
‐55°C to +150°C
‐55°C to +135°C
500mW
10mA
‐25V
LSU309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
BV_GSS
Gate to Source Breakdown Voltage
‐25
‐‐
V_GS(F)
Gate to Source Forward Voltage
0.7
‐‐
V_GS(off)
I_DSS
Gate to Source Cutoff Voltage
‐1
‐‐
Drain to Source Saturation Current²
12
‐‐
I_G
Gate Operating Current (Note 3)
‐‐
‐15
r_DS(on)
Drain to Source On Resistance
‐‐
35
MAX
‐‐
1
‐4
30
‐‐
‐‐
UNIT
V
mA
pA
Ω
CONDITIONS
V_DS = 0V, I_G = ‐1µA
V_DS = 0V, I_G = 10mA
V_DS = 10V, I_D = 1nA
V_DS = 10V, V_GS = 0V
V_DG = 9V, I_D = 10mA
V_GS = 0V, I_D = 1mA
Click To ^{LSU309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)}
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
g_fs
Forward Transconductance
10
14
‐‐
g_os
Output Conductance
‐‐
110
250
C_iss
Input Capacitance
‐‐
4
5
C_rss
Reverse Transfer Capacitance
‐‐
1.9
2.5
e_n
Equivalent Noise Voltage
6
‐‐
‐‐
Buy UNIT
mS
µS
pF
CONDITIONS
V_DS = 10V, I_D = 10mA , f = 1kHz
V_DS = 10V, V_GS = ‐10V , f = 1MHz
nV/√Hz
V_DS = 10V, I_D = 10mA , f = 100Hz
LSU309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP
NF
Noise Figure
f = 105MHz
‐‐
1.5
f = 450MHz
‐‐
2.7
G_pg
Power Gain³
f = 105MHz
‐‐
16
f = 450MHz
‐‐
11.5
g_fg
Forward Transconductance f = 105MHz
‐‐
14
f = 450MHz
‐‐
13
g_og
Output Conductance
f = 105MHz
‐‐
0.16
f = 450MHz
‐‐
0.55
MAX
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
Note 1 ‐ Absolute maximum ratings are limiting values above which LSU309 serviceability may be impaired.
Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%
Note 3 ‐ Measured at optimum input noise match
UNIT
dB
dB
mS
CONDITIONS
V_DS = 10V, I_D = 10mA
Micross Components Europe
Available Packages:
TO-18 (Bottom View)
LSU309 in TO-18
LSU309 in bare die.
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Email: [e-mail] Web: www.micross.com/distribution.aspx