LSK170 Datasheet, PDF (1/1 Pages) Linear Integrated Systems – ULTRA LOW NOISE SINGLE N-CHANNEL JFET

LSK170
ULTRA LOW NOISE
LOW CAPACITANCE J-FET
Replace discontinued Toshiba 2SK170 with LSK170
The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET
Optimized to provide low noise at both high and low
frequency with a narrow range of I_DSS and low
capacitance. The 2SK170 / LSK170’s low noise to
capacitance ratio and narrow range of low value I_DSS
provide solutions for low noise applications which
cannot tolerate high values of capacitance or wide
ranges of I_DSS.
The narrow ranges of I_DSS binning with the 2SK170 /
LSK170 promote ease of design tolerancing,
FEATURES
ULTRA LOW NOISE ( f = 1kHz)
e_n = 0.9nV / √ Hz (typ)
HIGH BREAKDOWN VOLTAGE
BV_GSS = 40V max
HIGH GAIN
HIGH INPUT IMPEDANCE
Y_fs = 22mS (typ)
I_G = ‐500pA max
LOW CAPACITANCE
22pF max
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
ABSOLUTE MAXIMUM RATINGS ¹
@ 25°C (unless otherwise noted)
particularly in low voltage applications. The 2SK170 /
LSK170 is ideal for portable battery operated
applications, and features high BV_DSS for maximum
linear headroom in high transient program content
amplifiers. The 2SK170 / LSK170 series has a uniquely
linear V_GS transfer function for a stability that is highly
desirable, particularly for audio front-end preamplifiers.
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ + 125°C
Maximum Currents
‐65°C to +150°C
‐55°C to +135°C
400mW
Gate Forward Current
I_G(F) = 10mA
2SK170 / LSK170 Applications:
Maximum Voltages
ƒ Audio – Amps, effects boxes, microphones
ƒ Instrumentation– Input stages
ƒ Acoustic Sensors – Sonobuoys
Gate to Source
Gate to Drain
V_GSS = 40V
V_GDS = 40V
Click To Buy ƒ Military – Antisubmarine, personnel + vehicle
detectors, sonar, radiation detectors…
FOR EQUIVALENT DUAL VERSION, SEE LSK389
www.micross.com/pdf/LSM_LSK389A_SOIC.pdf
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
BV_GSS
Gate to Source Breakdown Voltage
40
‐‐
‐‐
V
V_DS = 0, I_D = 100µA
V_GS(OFF)
Gate to Source Pinch‐off Voltage
0.2
‐‐
2
V
V_GS
Gate to Source Operating Voltage
‐‐
0.5
‐‐
V
V_DS = 10V, I_D = 1nA
V_DS = 10V, I_D = 1mA
Drain to Source 2SK170A / LSK170A 2.6
‐‐
6.5
I_DSS
Saturation
2SK170B / LSK170B
6
‐‐
12
mA
Current
2SK170C / LSK170C
10
‐‐
20
V_DG = 10V, V_GS = 0V
I_G
Gate Operating Current
‐‐
‐‐
0.5
nA
V_DG = 10V, I_D = 1mA
I_GSS
Gate to Source Leakage Current
‐‐
‐‐
1
nA
Y_fss
Full Conduction Transconductance
‐‐
22
‐‐
mS
V_DG = 10V, V_DS = 0
V_GD = 10V, V_GS = 0V, f = 1kHz
Y_fs
Typical Conduction Transconductance
‐‐
10
‐‐
mS
V_GD = 15V, I_D = 1mA
e_n
Noise Voltage
‐‐
0.9
1.9
nV/√Hz V_DS = 10V, I_D = 2mA, f = 1kHz, NBW = 1Hz
e_n
Noise Voltage
‐‐
2.5
4
nV/√Hz V_DS = 10V, I_D = 2mA, f = 10Hz, NBW = 1Hz
C_ISS
Common Source Input Capacitance
‐‐
20
‐‐
pF
C_RSS
Common Source Reverse Transfer
‐‐
5
‐‐
pF
Capacitance
V_DS = 10V, V_GS = 0V, f = 1MHz
V_DS = 15V, I_D = 500µA
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
Available Packages:
LSK170 in SOT-23
LSK170 available as bare die
Please contact Micross for full package and die dimensions:
Email: [e-mail]
Web: www.micross.com/distribution.aspx
SOT-23 (Top View)
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