LS846_TO-78 Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET

LS846
N-CHANNEL JFET
Linear Systems Low Leakage Low Noise JFET
The LS846 is a high-performance JFET featuring
extremely low noise and low leakage and is targeted for
use in a wide range of precision instrumentation
applications.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military and harsh environment
applications.
(See Packaging Information).
LS846 Applications:
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
FEATURES
LOW LEAKAGE
I_G = 15pA TYP.
LOW NOISE
e_n = 3nV/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+135°C
Maximum Voltage and Current– Note 1
‐V_GSS
Gate Voltage to Drain or Source
‐V_GDS
Gate Voltage to Drain or Source
‐V_DSO
Drain to Source Voltage
‐I_G(f)
Gate Forward Current
Maximum Power Dissipation
60V
60V
60V
50mA
Device Dissipation @ Free Air – Total
350mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV_GSS
Breakdown Voltage
60
TRANSCONDUCTANCE
Y_fSS
Full Conduction
1500
Click ^YfS
I_DSS
V_GS(off) or V_p
V_GS(on)
Typical Operation
DRAIN CURRENT
Full Conduction
GATE VOLTAGE
Pinchoff voltage
Operating Range
1000
1.5
1
0.5
GATE CURRENT
‐I_Gmax.
Operating
‐‐
‐I_Gmax.
High Temperature
‐‐
‐I_Gmax.
Reduced V_DG
‐‐
‐I_GSSmax.
At Full Conduction
‐‐
OUTPUT CONDUCTANCE
Y_OSS
Full Conduction
‐‐
Y_OS
Operating
‐‐
NOISE
NF
Figure
‐‐
e_n
Noise Voltage
‐‐
CAPACITANCE
C_ISS
Input
‐‐
C_RSS
Reverse Transfer
‐‐
TYP.
MAX.
‐‐
‐‐
UNITS
V
CONDITIONS
V_DS = 0
I_D=1nA
‐‐
‐‐
µmho
V_DG= 15V V_GS= 0V f = 1kHz
To Buy ¹⁵⁰⁰
‐‐
5
15
‐‐
3.5
‐‐
3.5
µmho
mA
V
V
V_DG= 15V I_D= 500µA
V_DG= 15V
V_GS= 0V
V_DS= 15V
V_DS=15V
I_D= 1nA
I_D=500µA
15
50
‐‐
50
5
30
‐‐
100
pA
V_DG= 15V I_D= 500µA
nA
T_A= +125°C
pA
V_DG = 3V I_D= 500µA
pA
V_DG= 15V , V_DS =0
‐‐
20
0.2
2
‐‐
0.5
3
7
µmho
µmho
dB
nV/√Hz
V_DG= 15V
V_GS= 0V
V_DG= 15V
I_D= 500µA
V_DS= 15V V_GS= 0V R_G= 10MΩ
f= 100Hz NBW= 6Hz
V_DS=15V I_D=500µA f=1KHz NBW=1Hz
‐‐
8
‐‐
3
pF
V_DS= 15V, I_D=500µA
V_DG= 15V, I_D=500µA
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
LS846 / LS846 in TO-71 & TO-78
LS846 / LS846 available as bare die
Please contact Micross for full package and die dimensions
TO-71 & TO-78 (Top View)
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
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