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LS844_SOT-23 Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL N-CHANNEL JFET | |||
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LS844
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS844 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LS844 features a 5-
mV offset and 10-µV/°C drift.
FEATURES
LOW DRIFT
| V GS1â2 / T| â¤10µV/°C
LOW LEAKAGE
LOW NOISE
IG = 15pA TYP.
en = 3nV/âHz TYP.
LOW OFFSET VOLTAGE
| V GS1â2| â¤5mV
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
The 6 Pin SOT-23 package provides ease of
manufacturing, and a lower cost assembly option.
(See Packaging Information).
LS844 Applications:
 Wideband Differential Amps
 High-Speed,Temp-Compensated Single-
Ended Input Amps
 High-Speed Comparators
 Impedance Converters and vibrations
detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Breakdown Voltage
60
BVGGO
GateâToâGate Breakdown
60
TRANSCONDUCTANCE
Click YfSS
YfS
|YFS1â2 / Y FS|
IDSS
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
1500
1000
ââ
1.5
|IDSS1â2 / IDSS| Mismatch at Full Conduction
ââ
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
1
VGS(on)
Operating Range
0.5
GATE CURRENT
âIGmax.
Operating
ââ
âIGmax.
High Temperature
ââ
âIGmax.
Reduced VDG
ââ
âIGSSmax.
At Full Conduction
ââ
OUTPUT CONDUCTANCE
YOSS
Full Conduction
ââ
YOS
Operating
ââ
|YOS1â2|
Differential
ââ
COMMON MODE REJECTION
CMR
â20 log | V GS1â2/ V DS|
90
â20 log | V GS1â2/ V DS|
ââ
NOISE
NF
Figure
ââ
en
Voltage
ââ
ââ
CAPACITANCE
CISS
Input
ââ
CRSS
Reverse Transfer
ââ
CDD
DrainâtoâDrain
ââ
Maximum Temperatures
Storage Temperature
â65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor â Note 1
âVGSS
Gate Voltage to Drain or Source
âVDSO
Drain to Source Voltage
âIG(f)
Gate Forward Current
Maximum Power Dissipation
60V
60V
50mA
Device Dissipation @ Free Air â Total
400mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1â2 / T| max.
| V GS1â2 | max.
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
10 µV/°C VDG=10V, ID=500µA
TA=â55°C to +125°C
5
mV VDG=10V, ID=500µA
TYP.
MAX.
ââ
ââ
ââ
ââ
UNITS
V
V
CONDITIONS
VDS = 0
I G= 1nA
ID=1nA
ID= 0
IS= 0
To Buy ââ
ââ
1500
ââ
0.6
3
5
15
µmho
µmho
%
mA
VDG= 15V
VDG= 15V
VGS= 0V f = 1kHz
ID= 500µA
VDG= 15V
VGS= 0V
1
5
%
ââ
3.5
ââ
3.5
15
50
ââ
50
5
30
ââ
100
ââ
20
0.2
2
0.02
0.2
V
V
pA
nA
pA
pA
µmho
µmho
µmho
VDS= 15V
VDS=15V
ID= 1nA
ID=500µA
VDG= 15V ID= 500µA
TA= +125°C
VDG = 3V ID= 500µA
VDG= 15V , VDS =0
VDG= 15V
VDG= 15V
VGS= 0V
ID= 500µA
110
ââ
85
ââ
ââ
0.5
ââ
7
ââ
11
ââ
8
ââ
3
0.5
ââ
dB
dB
nV/âHz
pF
âVDS = 10 to 20V ID=500µA
âVDS = 5 to 10V ID=500µA
VDS= 15V VGS= 0V RG= 10MΩ
f= 100Hz NBW= 6Hz
VDS=15V ID=500µA f=1KHz NBW=1Hz
VDS=15V ID=500µA f=10Hz NBW=1Hz
VDS= 15V, ID=500µA
VDG= 15V, ID=500µA
Note 1 â These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
LS844 / LS844 in SOT-23
LS844 / LS844 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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