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LS831_TO-71 Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL N-CHANNEL JFET | |||
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LS831
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS831 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LS831 features a 25-
mV offset and 10-µV/°C drift.
FEATURES
ULTRA LOW DRIFT
| V GS1â2 / T| â¤10µV/°C
ULTRA LOW LEAKAGE
LOW NOISE
IG = 80fA TYP.
en = 70nV/âHz TYP.
LOW CAPACITANCE
CISS = 3pF MAX.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications.
(See Packaging Information).
LS831 Applications:
 Wideband Differential Amps
 High-Speed,Temp-Compensated Single-
Ended Input Amps
 High-Speed Comparators
 Impedance Converters and vibrations
detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Breakdown Voltage
40
BVGGO
GateâToâGate Breakdown
40
Click TRANSCONDUCTANCE
YfSS
Full Conduction
70
YfS
Typical Operation
50
|YFS1â2 / Y FS|
Mismatch
ââ
DRAIN CURRENT
IDSS
Full Conduction
0.5
|IDSS1â2 / IDSS| Mismatch at Full Conduction
ââ
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
0.6
VGS(on)
Operating Range
ââ
GATE CURRENT
âIGmax.
Operating
ââ
âIGmax.
High Temperature
ââ
âIGSSmax.
At Full Conduction
ââ
âIGSSmax.
High Temperature
5
IGGO
GateâtoâGate Leakage
ââ
OUTPUT CONDUCTANCE
YOSS
Full Conduction
ââ
YOS
Operating
ââ
COMMON MODE REJECTION
CMR
â20 log | V GS1â2/ V DS|
ââ
â20 log | V GS1â2/ V DS|
ââ
NOISE
NF
Figure
ââ
en
Voltage
ââ
CAPACITANCE
CISS
Input
ââ
CRSS
Reverse Transfer
ââ
CDD
DrainâtoâDrain
ââ
Maximum Temperatures
Storage Temperature
â65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor â Note 1
âVGSS
Gate Voltage to Drain or Source
âVDSO
Drain to Source Voltage
âIG(f)
Gate Forward Current
âIG
Gate Reverse Current
Maximum Power Dissipation
40V
40V
10mA
10µA
Device Dissipation @ Free Air â Total
400mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1â2 / T| max.
| V GS1â2 | max.
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
10 µV/°C VDG=10V, ID=30µA
TA=â55°C to +125°C
25
mV VDG=10V, ID=30µA
TYP.
MAX.
UNITS
CONDITIONS
60
ââ
V
VDS = 0
ID=1nA
ââ
ââ
V
I G= 1nA
ID= 0
IS= 0
To Buy 300
500
100
200
0.6
3
µmho
µmho
%
VDG= 10V
VDG= 10V
VGS= 0V f = 1kHz
ID= 30µA f = 1kHz
ââ
10
mA
VDG= 10V
VGS= 0V
1
5
%
2
4.5
ââ
4
ââ
0.1
ââ
0.1
ââ
0.2
5
0.5
1
ââ
ââ
5
ââ
0.5
90
ââ
90
ââ
ââ
1
20
70
ââ
3
ââ
1.5
ââ
0.1
V
V
pA
nA
pA
nA
pA
µmho
µmho
dB
dB
nV/âHz
pF
pF
pF
VDS= 10V
VDS=10V
ID= 1nA
ID=30µA
VDG= 10V ID= 30µA
TA= +125°C
VDS =0
VGS= 0V, VGS= â20V, TA= +125°C
VGG = 20V
VDG= 10V
VDG= 10V
VGS= 0V
ID= 30µA
âVDS = 10 to 20V ID=30µA
âVDS = 5 to 10V ID=30µA
VDS= 10V VGS= 0V RG= 10MΩ
f= 100Hz NBW= 6Hz
VDS=10V ID=30µA f=10Hz NBW=1Hz
VDS= 10V, VGS= 0V, f= 1MHz
VDS= 10V, VGS= 0V, f= 1MHz
VDS= 10V, ID=30µA
Note 1 â These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 & TO-78 (Top View)
Available Packages:
LS831 / LS831 in TO-71 & TO-78
LS831 / LS831 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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