|
LS5906_SOIC Datasheet, PDF (1/1 Pages) Micross Components – N-CHANNEL JFET | |||
|
LS5906
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
The LS5906 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
| VGS1â2 / T| = 5µV/°C TYP.
IG = 150fA TYP.
wide range of precision instrumentation applications
where tight tracking is required.
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
Vp = 2V TYP.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of
manufacturing, and the symmetrical pinout prevents
@ 25°C (unless otherwise noted)
Maximum Temperatures
improper orientation.
Storage Temperature
â65°C to +150°C
(See Packaging Information).
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor â Note 1
âVGSS
Gate Voltage to Drain or Source
40V
âVDSO
Drain to Source Voltage
40V
âIG(f)
Gate Forward Current
10mA
LS5906 Benefits:
 Tight Tracking
 Good matching
 Ultra Low Leakage
 Low Drift
âIG
Gate Reverse Current
Maximum Power Dissipation
10µA
Device Dissipation @ Free Air â Total
40mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| VGS1â2 / T| max.
DRIFT VS.
TEMPERATURE
5 µV/°C VDG=10V, ID=30µA
TA=â55°C to +125°C
| V GS1â2 | max.
OFFSET VOLTAGE
5
mV VDG=10V, ID=30µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX.
UNITS
CONDITIONS
BVGSS
Breakdown Voltage
40
60
ââ
V
VDS = 0
ID=1nA
BVGGO
GateâToâGate Breakdown
40
ââ
ââ
V
IG= 1nA
ID= 0
IS= 0
TRANSCONDUCTANCE
YfSS
Full Conduction
70
Click YfS
Typical Operation
50
|YFS1â2 / Y FS|
Mismatch
ââ
DRAIN CURRENT
IDSS
Full Conduction
60
|IDSS1â2 / IDSS| Mismatch at Full Conduction
ââ
300
500
µmho
VDG= 10V VGS= 0V f = 1kHz
To Buy 100
200
1
5
400
1000
2
5
µmho
%
µA
%
VDG= 10V ID= 30µA f = 1kHz
VDG= 10V
VGS= 0V
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
0.6
2
4.5
V
VDS= 10V
ID= 1nA
VGS(on)
Operating Range
ââ
ââ
4
V
VDS=10V
ID=30µA
GATE CURRENT
âIGmax.
Operating
ââ
ââ
1
pA
VDG= 10V ID= 30µA
âIGmax.
âIGSSmax.
âIGSSmax.
High Temperature
At Full Conduction
High Temperature
ââ
ââ
1
ââ
ââ
2
ââ
ââ
5
nA
TA= +125°C
pA
VDS =0V VGS= 20V
nA
TA= +125°C
IGGO
GateâtoâGate Leakage
ââ
1
ââ
pA
VGG= 20V
OUTPUT CONDUCTANCE
YOSS
Full Conduction
ââ
ââ
5
YOS
Operating
ââ
0.1
0.1
µmho
VDG= 10V
VDG= 10V
VGS= 0V
ID=30µA
|YOS1â2|
Differential
ââ
0.01
0.1
COMMON MODE REJECTION
CMR
â20 log |âVGS1â2/âVDS|
ââ
90
ââ
dB
âVDS = 10 to 20V ID=30µA
CMR
â20 log |âVGS1â2/âVDS|
ââ
90
ââ
âVDS = 5 to 10V ID=30µA
NOISE
VDS= 10V VGS= 0V RG= 10MΩ
NF
Figure
ââ
ââ
1
dB
f= 100Hz NBW= 6Hz
en
Voltage
ââ
20
70
nV/âHz
VDG=10V ID=30µA f=10Hz NBW=1Hz
CAPACITANCE
CISS
Input
ââ
ââ
3
VDS= 10V VGS= 0V f= 1MHz
CRSS
Reverse Transfer
ââ
ââ
1.5
pF
CDD
DrainâtoâDrain
ââ
ââ
0.1
VDG = 20V ID=30µA
Note 1 â These ratings are limiting values above which the serviceability of any semiconductor may be impaired
SOIC / PDIP (Top View)
Micross Components Europe
Available Packages:
LS5906 in PDIP / SOIC
LS5906 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
|