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LS3N171 Datasheet, PDF (1/1 Pages) Micross Components – an enhancement mode N-Channel Mosfet | |||
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LS3N171
N-CHANNEL MOSFET
The LS3N171 is an enhancement mode N-Channel Mosfet
The LS3N171 is an enhancement mode N-Channel
Mosfet designed for use as a General Purpose amplifier
or switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
LS3N171 Features:
 Low ON Resistance
 Low Capacitance
 High Gain
 High Gate Breakdown Voltage
 Low Threshold Voltage
FEATURES
DIRECT REPLACEMENT FOR INTERSIL LS3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS (Note 1)
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Drain to Source
MAXIMUM VOLTAGES
Drain to Gate
Drain to Source
Peak Gate to Source
rDS(on) ⤠200Ω
td(on) ⤠3.0ns
â65°C to +150°C
â55°C to +135°C
300mW
30mA
±35V
25V
±35V
LS3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BVDSS
Drain to Source Breakdown Voltage 25
ââ
ââ
VDS(on)
Drain to Source âOnâ Voltage
ââ
ââ
2.0
V
ID = 10µA, VGS = 0V
ID = 10mA, VGS = 10V
VGS(th)
Gate to Source Threshold Voltage 1.5
ââ
2.0
VDS = 10V, ID = 10µA
IGSS
Gate Leakage Current
ââ
ââ
10
pA
VGS = â35V, VDS = 0V
IDSS
Drain Leakage Current âOffâ
ââ
ââ
10
nA
VGS = 10V, VDS = 10V
Click ID(on)
gfs
rDS(on)
Crss
Ciss
Drain Current âOnâ
Forward Transconductance
Drain to Source âOnâ Resistance
Reverse Transfer Capacitance
Input Capacitance
10
1000
ââ
ââ
ââ
To ââ
ââ
ââ
ââ
ââ
200
ââ
1.3
ââ
5
Buy mA
VGS = 10V, VDS = 10V
µS
VDS = 10V, ID = 2mA , f = 1kHz
Ω
VGS = 10V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V , f = 1MHz
pF
VDS = 10V, VGS = 0V , f = 1MHz
Cdb
Drain to Body Capacitance
ââ
ââ
5.0
VDB = 10V, f = 1MHz
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
td(on)
Turn On Delay Time
tr
Turn On Rise Time
td(off)
Turn Off Delay Time
tf
Turn Off Fall Time
MAX UNITS
3
10
ns
3
15
CONDITIONS
VDD = 10V, ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω
Note 1 â Absolute maximum ratings are limiting values above which LS3N171 serviceability may be impaired.
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Available Packages:
LS3N171 in TO-72
LS3N171 in bare die.
Please contact Micross for full
package and die dimensions
TO-72 (Bottom View)
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
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