LS3550B_SOT-23 Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL NPN TRANSISTOR

LS3550B
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Monolithic Dual PNP Transistor
The LS3550B is a monolithic pair of PNP transistors
mounted in a single SOT-23 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 6 Pin SOT-23 provides ease of manufacturing, and
a lower cost assembly option.
(See Packaging Information).
LS3550B Features:
ƒ Tight matching
ƒ Low Output Capacitance
FEATURES
EXCELLENT THERMAL TRACKING
TIGHT V_BE MATCHING
ABSOLUTE MAXIMUM RATINGS ¹
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
≤5µV/°C
|V_BE1 – V_BE2 |≤5mV
‐65°C to +150°C
‐55°C to +150°C
TBD
10mA
80V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|V_BE1 – V_BE2 |
Base Emitter Voltage Differential
‐‐
‐‐
5
mV
I_C = ‐10mA, V_CE = ‐5V
∆|(V_BE1 – V_BE2)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
‐‐
‐‐
5
µV/°C
I_C = ‐10mA, V_CE = ‐5V
T_A = ‐40°C to +85°C
|I_B1 – I_B2 |
Base Current Differential
‐‐
‐‐
10
nA
I_C = ‐10µA, V_CE = ‐5V
|∆ (I_B1 – I_B2)|/∆T Base Current Differential
‐‐
‐‐
0.5
nA/°C
I_C = ‐10µA, V_CE = ‐5V
Change with Temperature
T_A = ‐40°C to +85°C
Click To Buy ^hFE1/hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV_CBO
Collector to Base Voltage
‐40
‐‐
‐‐
10
TYP.
MAX. UNITS
‐‐
‐‐
V
%
I_C = 10µA, V_CE = 5V
CONDITIONS
I_C = 10µA, I_E = 0
BV_CEO
Collector to Emitter Voltage
‐40
‐‐
‐‐
V
BV_EBO
Emitter‐Base Breakdown Voltage
‐6.2
‐‐
‐‐
V
BV_CCO
Collector to Collector Voltage
‐80
‐‐
‐‐
V
I_C = 10µA, I_B = 0
I_E = 10µA, I_C = 0²
I_C = 10µA, I_E = 0
100
‐‐
‐‐
h_FE
DC Current Gain
80
‐‐
‐‐
I_C = ‐1mA, V_CE = ‐5V
I_C = ‐10mA, V_CE = ‐5V
80
‐‐
‐‐
I_C = ‐100mA, V_CE = ‐5V
V_CE(SAT)
Collector Saturation Voltage
‐‐
‐‐
‐0.25
V
I_C = ‐100mA, I_B = ‐10mA
I_EBO
Emitter Cutoff Current
‐‐
‐‐
‐0.2
nA
I_E = 0, V_CB = ‐3V
I_CBO
Collector Cutoff Current
‐‐
‐‐
‐0.2
nA
I_E = 0, V_CB = ‐30V
C_OBO
Output Capacitance
‐‐
‐‐
2
pF
C_C1C2
Collector to Collector Capacitance
‐‐
‐‐
2
pF
I_E = 0, V_CB = ‐10V
V_CC = 0V
I_C1C2
Collector to Collector Leakage Current
‐‐
‐‐
‐1
nA
V_CC = ±80V
f_T
Current Gain Bandwidth
‐‐
‐‐
600
MHz
I_C = ‐1mA, V_CE = ‐5V
Product(Current)
NF
Narrow Band Noise Figure
‐‐
‐‐
3
dB I_C = ‐100µA, V_CE = ‐5V, BW=200Hz, R_G= 10Ω,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
LS3550B in SOT-23
LS3550B available as bare die
Please contact Micross for full package and die dimensions:
Email: [e-mail]
Web: www.micross.com/distribution.aspx
SOT-23 (Top View)
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