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LS3550B Datasheet, PDF (1/1 Pages) Micross Components – Linear Systems Monolithic Dual PNP Transistor | |||
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LS3550B
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Monolithic Dual PNP Transistor
The LS3550B is a monolithic pair of PNP transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS3550B Features:
 Tight matching
 Low Output Capacitance
FEATURES
EXCELLENT THERMAL TRACKING
TIGHT VBE MATCHING
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
â¤5µV/°C
|VBE1 â VBE2 |â¤5mV
â65°C to +150°C
â55°C to +150°C
TBD
10mA
80V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 â VBE2 |
Base Emitter Voltage Differential
ââ
ââ
5
mV
IC = â10mA, VCE = â5V
â|(VBE1 â VBE2)| / âT
Base Emitter Voltage Differential
Change with Temperature
ââ
ââ
5
µV/°C
IC = â10mA, VCE = â5V
TA = â40°C to +85°C
|IB1 â IB2 |
Base Current Differential
ââ
ââ
10
nA
IC = â10µA, VCE = â5V
|â (IB1 â IB2)|/âT Base Current Differential
ââ
ââ
0.5
nA/°C
IC = â10µA, VCE = â5V
Change with Temperature
TA = â40°C to +85°C
Click To Buy hFE1/hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVCBO
Collector to Base Voltage
â40
ââ
ââ
10
TYP.
MAX. UNITS
ââ
ââ
V
%
IC = 10µA, VCE = 5V
CONDITIONS
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
â40
ââ
ââ
V
BVEBO
EmitterâBase Breakdown Voltage
â6.2
ââ
ââ
V
BVCCO
Collector to Collector Voltage
â80
ââ
ââ
V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
100
ââ
ââ
hFE
DC Current Gain
80
ââ
ââ
IC = â1mA, VCE = â5V
IC = â10mA, VCE = â5V
80
ââ
ââ
IC = â100mA, VCE = â5V
VCE(SAT)
Collector Saturation Voltage
ââ
ââ
â0.25
V
IC = â100mA, IB = â10mA
IEBO
Emitter Cutoff Current
ââ
ââ
â0.2
nA
IE = 0, VCB = â3V
ICBO
Collector Cutoff Current
ââ
ââ
â0.2
nA
IE = 0, VCB = â30V
COBO
Output Capacitance
ââ
ââ
2
pF
CC1C2
Collector to Collector Capacitance
ââ
ââ
2
pF
IE = 0, VCB = â10V
VCC = 0V
IC1C2
Collector to Collector Leakage Current
ââ
ââ
â1
nA
VCC = ±80V
fT
Current Gain Bandwidth
ââ
ââ
600
MHz
IC = â1mA, VCE = â5V
Product(Current)
NF
Narrow Band Noise Figure
ââ
ââ
3
dB IC = â100µA, VCE = â5V, BW=200Hz, RG= 10Ω,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse baseâtoâemitter voltage must never exceed 6.2 volts; the reverse baseâtoâemitter current must never exceed 10µA.
Available Packages:
LS3550B in P-DIP
LS3550B available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
P-DIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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