LS352_TO-78 Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL NPN TRANSISTOR

LS352
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Monolithic Dual PNP Transistor
The LS352 is a monolithic pair of PNP transistors
mounted in a single TO-78 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The hermetically sealed TO-78 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
LS352 Features:
ƒ Very high gain
ƒ Tight matching
ƒ Low Output Capacitance
FEATURES
HIGH GAIN
TIGHT V_BE MATCHING
HIGH f_t
ABSOLUTE MAXIMUM RATINGS ¹
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
h_FE ≥ 200 @ 10µA‐1mA
|V_BE1 – V_BE2 |= 0.2mV TYP.
275MHz TYP. @ 1mA
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|V_BE1 – V_BE2 |
Base Emitter Voltage Differential
‐‐
0.2
0.5
mV
I_C = 10µA, V_CE = 5V
∆|(V_BE1 – V_BE2)| / ∆T
|I_B1 – I_B2 |
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
‐‐
0.5
2
µV/°C
I_C = 10µA, V_CE = 5V
T_A = ‐55°C to +125°C
‐‐
‐‐
5
nA
I_C = 10µA, V_CE = 5V
Click |∆ (IB1 – IB2)|/°C
h_FE1 /h_FE2
Base Current Differential
Change with Temperature
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
To^‐‐
‐‐
‐‐
5
Buy ^0.3
nA/°C
‐‐
%
I_C = 10µA, V_CE = 5V
T_A = ‐55°C to +125°C
I_C = 10µA, V_CE = 5V
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
BV_CBO
BV_CEO
BV_EBO
BV_CCO
h_FE
Collector to Base Voltage
60
‐‐
‐‐
V
Collector to Emitter Voltage
60
‐‐
‐‐
V
Emitter‐Base Breakdown Voltage
6.2
‐‐
‐‐
V
Collector to Collector Voltage
100
‐‐
‐‐
V
200
‐‐
600
DC Current Gain
200
‐‐
600
I_C = 10µA, I_E = 0
I_C = 10µA, I_B = 0
I_E = 10µA, I_C = 0²
I_C = 10µA, I_E = 0
I_C = 10µA, V_CE = 5V
I_C = 100µA, V_CE = 5V
200
‐‐
‐‐
I_C = 1mA, V_CE = 5V
V_CE(SAT)
Collector Saturation Voltage
‐‐
‐‐
0.5
V
I_C = 1mA, I_B = 0.1mA
I_EBO
Emitter Cutoff Current
‐‐
‐‐
0.2
nA
I_E = 0, V_CB = 3V
I_CBO
Collector Cutoff Current
‐‐
‐‐
0.2
nA
I_E = 0, V_CB = 20V
C_OBO
Output Capacitance
‐‐
‐‐
2
pF
I_E = 0, V_CB = 5V
C_C1C2
Collector to Collector Capacitance
‐‐
‐‐
2
pF
V_CC = 0V
I_C1C2
Collector to Collector Leakage Current
‐‐
‐‐
0.5
nA
V_CC = ±45V
f_T
Current Gain Bandwidth Product
200
‐‐
‐‐
MHz
I_C = 1mA, V_CE = 5V
NF
Narrow Band Noise Figure
‐‐
‐‐
3
dB
I_C = 100µA, V_CE = 5V, BW=200Hz, R_G= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
TO-78 (Bottom View)
Available Packages:
LS352 in TO-78
LS352 available as bare die
Please contact Micross for full package and die dimensions:
Email: [e-mail]
Web: www.micross.com/distribution.aspx
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