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LS3250A_SOIC Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL N-CHANNEL JFET | |||
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LS3250A
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS3250A is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and is ideal for use in
tracking applications.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS3250A Features:
 Tight matching
 Low Output Capacitance
FEATURES
TIGHT MATCHING
THERMAL TRACKING
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
⤠2mV
⤠3µV/ °C
â65°C to +150°C
â55°C to +150°C
TBD
50mA
80V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 â VBE2 |
Base Emitter Voltage Differential
ââ
ââ
2
mV
IC = 10mA, VCE = 5V
â|(VBE1 â VBE2)| / âT
Base Emitter Voltage Differential
Change with Temperature
ââ
â
3
µV/°C
IC = 10µA, VCE = 5V
TA = â40°C to +85°C
|IB1 â IB2 |
Base Current Differential
ââ
ââ
10
nA
IC = 10µA, VCE = 5V
|â (IB1 â IB2)|/ âT Base Current Differential
ââ
ââ
0.5
nA/°C
IC = 10µA, VCE = 5V
Change with Temperature
TA = â40°C to +85°C
Click To Buy hFE1/hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVCBO
Collector to Base Voltage
45
ââ
ââ
10
TYP.
MAX. UNITS
ââ
ââ
V
%
IC = 10µA, VCE = 5V
CONDITIONS
IC = 10mA, IE = 0
BVCEO
Collector to Emitter Voltage
45
ââ
ââ
V
BVEBO2
EmitterâBase Breakdown Voltage
6.2
ââ
ââ
V
BVCCO
Collector to Collector Voltage
80
ââ
ââ
V
IC = 10µA, IB = 0
IE = 10µA, IC = 0
IC = 10µA, IE = 0
150
ââ
ââ
hFE
DC Current Gain
120
ââ
ââ
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
100
ââ
ââ
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
ââ
ââ
0.25
V
IC = 100mA, IB = 10mA
IEBO
Emitter Cutoff Current
ââ
ââ
0.2
nA
IC = 0A, VCB = 3V
ICBO
Collector Cutoff Current
ââ
ââ
0.2
nA
IE = 0A, VCB = 20V
COBO
Output Capacitance
ââ
ââ
2
pF
IC1C2
Collector to Collector Leakage Current
ââ
ââ
1
nA
IE = 0A, VCB = 10V
VCC = ±80V
fT
Current Gain Bandwidth Product
ââ
ââ
600
MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
ââ
ââ
3
dB
IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse baseâtoâemitter voltage must never exceed 6.2 volts; the reverse baseâtoâemitter current must never exceed 10µA.
SOIC (Top View)
Available Packages:
LS3250A in SOIC
LS3250A available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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