LS318_SOIC Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL NPN TRANSISTOR

LS318
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS318 is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and is ideal for use in
logging applications. See LS358 for PNP.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS318 Features:
ƒ Tight matching
ƒ Low Output Capacitance
FEATURES
LOG CONFORMANCE
ABSOLUTE MAXIMUM RATINGS ¹
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
∆re = 1Ω TYP.
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|V_BE1 – V_BE2 |
Base Emitter Voltage Differential
‐‐
0.4
1
mV
I_C = 10µA, V_CE = 5V
∆|(V_BE1 – V_BE2)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
‐‐
1
5
µV/°C
I_C = 10µA, V_CE = 5V
T_A = ‐55°C to +125°C
|I_B1 – I_B2 |
Base Current Differential
‐‐
‐‐
10
nA
I_C = 10µA, V_CE = 5V
|∆ (I_B1 – I_B2)|/°C Base Current Differential
‐‐
‐‐
0.5
nA/°C
I_C = 10µA, V_CE = 5V
Change with Temperature
T_A = ‐55°C to +125°C
Click To Buy ^hFE1/hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
∆re
Log Conformance
‐‐
‐‐
5
‐‐
TYP.
MAX. UNITS
‐‐
1.5
Ω
%
I_C = 10µA, V_CE = 5V
CONDITIONS
I_C = 10‐100‐1000µA, V_CE = 5V
BV_CBO
Collector to Base Voltage
25
‐‐
‐‐
V
I_C = 10µA, I_E = 0
BV_CEO
Collector to Emitter Voltage
25
‐‐
‐‐
V
BV_EBO
Emitter‐Base Breakdown Voltage
6.2
‐‐
‐‐
V
I_C = 10µA, I_B = 0
I_E = 10µA, I_C = 0²
BV_CCO
Collector to Collector Voltage
45
‐‐
‐‐
V
I_C = 10µA, I_E = 0
150
‐‐
600
h_FE
DC Current Gain
150
‐‐
600
I_C = 10µA, V_CE = 5V
I_C = 100µA, V_CE = 5V
150
‐‐
‐‐
I_C = 1mA, V_CE = 5V
V_CE(SAT)
Collector Saturation Voltage
‐‐
‐‐
0.25
V
I_C = 1mA, I_B = 0.1mA
I_EBO
Emitter Cutoff Current
‐‐
‐‐
0.2
nA
I_C = 0, V_EB = 3V
I_CBO
Collector Cutoff Current
‐‐
‐‐
0.2
nA
C_OBO
Output Capacitance
‐‐
‐‐
2
pF
I_E = 0, V_CB = 20V
I_E = 0, V_CB = 3V
C_C1C2
Collector to Collector Capacitance
‐‐
‐‐
2
pF
V_CC = 0V
I_C1C2
Collector to Collector Leakage Current
‐‐
‐‐
0.5
nA
f_T
Current Gain Bandwidth Product
200
‐‐
‐‐
MHz
V_CC = ±45V
I_C = 1mA, V_CE = 5V
NF
Narrow Band Noise Figure
‐‐
‐‐
3
dB
I_C = 100µA, V_CE = 5V, BW=200Hz, R_G= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
LS318 in SOIC
LS318 available as bare die
Please contact Micross for full package and die dimensions:
Email: [e-mail]
Web: www.micross.com/distribution.aspx
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