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LS318_PDIP Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL NPN TRANSISTOR | |||
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LS318
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS318 is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and is ideal for use
in logging applications. See LS358 for PNP.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS318 Features:
 Tight matching
 Low Output Capacitance
FEATURES
LOG CONFORMANCE
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
âre = 1⦠TYP.
â65°C to +200°C
â55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 â VBE2 |
Base Emitter Voltage Differential
ââ
0.4
1
mV
IC = 10µA, VCE = 5V
â|(VBE1 â VBE2)| / âT
Base Emitter Voltage Differential
Change with Temperature
ââ
1
5
µV/°C
IC = 10µA, VCE = 5V
TA = â55°C to +125°C
|IB1 â IB2 |
Base Current Differential
ââ
ââ
10
nA
IC = 10µA, VCE = 5V
|â (IB1 â IB2)|/°C Base Current Differential
ââ
ââ
0.5
nA/°C
IC = 10µA, VCE = 5V
Change with Temperature
TA = â55°C to +125°C
Click To Buy hFE1/hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
âre
Log Conformance
ââ
ââ
5
ââ
TYP.
MAX. UNITS
ââ
1.5
Ω
%
IC = 10µA, VCE = 5V
CONDITIONS
IC = 10â100â1000µA, VCE = 5V
BVCBO
Collector to Base Voltage
25
ââ
ââ
V
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
25
ââ
ââ
V
BVEBO
EmitterâBase Breakdown Voltage
6.2
ââ
ââ
V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
BVCCO
Collector to Collector Voltage
45
ââ
ââ
V
IC = 10µA, IE = 0
150
ââ
600
hFE
DC Current Gain
150
ââ
600
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
150
ââ
ââ
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
ââ
ââ
0.25
V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
ââ
ââ
0.2
nA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
ââ
ââ
0.2
nA
COBO
Output Capacitance
ââ
ââ
2
pF
IE = 0, VCB = 20V
IE = 0, VCB = 3V
CC1C2
Collector to Collector Capacitance
ââ
ââ
2
pF
VCC = 0V
IC1C2
Collector to Collector Leakage Current
ââ
ââ
0.5
nA
fT
Current Gain Bandwidth Product
200
ââ
ââ
MHz
VCC = ±45V
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
ââ
ââ
3
dB
IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse baseâtoâemitter voltage must never exceed 6.2 volts; the reverse baseâtoâemitter current must never exceed 10µA.
Available Packages:
LS318 in P-DIP
LS318 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
P-DIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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