LS124_SOIC Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL NPN TRANSISTOR

LS124
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT124
The LS124 is a monolithic pair of Super-Beta NPN
transistors mounted in a single SOIC package. The
monolithic dual chip design reduces parasitics and
gives better performance while ensuring extremely tight
matching. The LS124 is a direct replacement for
discontinued Intersil IT124.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS124 Features:
ƒ Very high gain
ƒ Tight matching
ƒ Low Output Capacitance
FEATURES
Direct Replacement for INTERSIL LS124
HIGH GAIN
LOW OUTPUT CAPACITANCE
V_BE tracking
ABSOLUTE MAXIMUM RATINGS ¹
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
h_FE ≥ 1500 @ 1 AND 10µA
≤ 2.0pF
≤ 5.0µV°C
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|V_BE1 – V_BE2 |
Base Emitter Voltage Differential
‐‐
2
5
mV
I_C = 10µA, V_CE = 1V
∆|(V_BE1 – V_BE2)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
‐‐
5
15
µV/°C
I_C = 10µA, V_CE = 1V
T_A = ‐55°C to +125°C
Click To Buy ^{|IB1–IB2|}
Base Current Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV_CBO
Collector to Base Voltage
2
‐‐
‐‐
0.6
TYP.
MAX. UNITS
‐‐
‐‐
V
nA
I_C = 10µA, V_CE = 1V
CONDITIONS
I_C = 10µA, I_E = 0
BV_CEO
Collector to Emitter Voltage
2
‐‐
‐‐
V
BV_EBO
Emitter‐Base Breakdown Voltage
6.2
‐‐
‐‐
V
BV_CCO
Collector to Collector Voltage
100
‐‐
‐‐
V
I_C = 10µA, I_B = 0
I_E = 10µA, I_C = 0²
I_C = 10µA, I_E = 0
h_FE
DC Current Gain
1500
‐‐
‐‐
I_C = 1µA, V_CE = 1V
1500
‐‐
‐‐
I_C = 10µA, V_CE = 1V
V_CE(SAT)
Collector Saturation Voltage
‐‐
‐‐
0.5
V
I_C = 1mA, I_B = 0.1mA
I_EBO
Emitter Cutoff Current
‐‐
‐‐
100
pA
I_CBO
Collector Cutoff Current
‐‐
‐‐
100
pA
I_C = 0, V_EB = 3V
I_E = 0, V_CB = 1V
C_OBO
Output Capacitance
‐‐
‐‐
2
pF
I_E = 0, V_CB = 1V
C_C1C2
Collector to Collector Capacitance
‐‐
‐‐
2
pF
I_C1C2
Collector to Collector Leakage Current
‐‐
‐‐
10
nA
V_CC = 0V
V_CC = ±50V
f_T
Current Gain Bandwidth Product
100
‐‐
‐‐
MHz
I_C = 100µA, V_CE = 1V
NF
Narrow Band Noise Figure
‐‐
‐‐
3
dB
I_C = 10µA, V_CE = 3V, BW=200Hz, R_G= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
LS124 in SOIC
LS124 available as bare die
Please contact Micross for full package and die dimensions:
Email: [e-mail]
Web: www.micross.com/distribution.aspx
SOIC (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.