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J112 Datasheet, PDF (1/1 Pages) Motorola, Inc – JFET Chopper Transistor (N-Channel- Depletion)
J112
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J112
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The TO-92
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J112 Benefits:
ƒ Short Sample & Hold Aperture Time
ƒ Low insertion loss
ƒ Low Noise
J112 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J112
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
t(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
‐55°C to +150°C
‐55°C to +135°C
360mW
50mA
VGDS = ‐35V
VGSS = ‐35V
J112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
BVGSS
Gate to Source Breakdown Voltage
‐35
‐‐
‐‐
VGS(off)
Gate to Source Cutoff Voltage
‐1
‐‐
‐5
VGS(F)
Gate to Source Forward Voltage
‐‐
0.7
‐‐
IDSS
Drain to Source Saturation Current (Note 2)
5
‐‐
‐‐
IGSS
Gate Reverse Current
‐‐
‐0.005
‐1
IG
Gate Operating Current
‐‐
‐0.5
‐‐
ID(off)
Drain Cutoff Current
‐‐
0.005
1
Click To rDS(on)
Drain to Source On Resistance
‐‐
‐‐
J112 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
gfs
Forward Transconductance
‐‐
6
50
MAX
‐‐
gos
Output Conductance
‐‐
25
‐‐
rDS(on)
Drain to Source On Resistance
‐‐
‐‐
50
Ciss
Input Capacitance
‐‐
7
12
Crss
Reverse Transfer Capacitance
‐‐
3
5
en
Equivalent Noise Voltage
‐‐
3
‐‐
UNITS
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
V
IG = 1mA, VDS = 0V
mA
VDS = 15V, VGS = 0V
nA
VGS = ‐15V, VDS = 0V
pA
VDG = 15V, ID = 10mA
nA
VDS = 5V, VGS = ‐10V
Buy Ω
UNITS
mS
IG = 1mA, VDS = 0V
CONDITIONS
VDS = 20V, ID = 1mA , f = 1kHz
µS
Ω
VGS = 0V, ID = 0mA, f = 1kHz
pF
VDS = 0V, VGS = ‐10V, f = 1MHz
nV/√Hz
VDG = 10V, ID = 1mA , f = 1kHz
J112 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
td(on)
Turn On Time
2
tr
Turn On Rise Time
2
ns
td(off)
Turn Off Time
6
tf
Turn Off Fall Time
15
VDD = 10V
VGS(H) = 0V
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which J112 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
J112 SWITCHING CIRCUIT PARAMETERS
VGS(L)
RL
ID(on)
‐7V
1600Ω
6mA
Available Packages:
J112 in TO-92
J112 in bare die.
TO-92 (Bottom View)
SWITCHING TEST CIRCUIT
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.