J111 Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

J111
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J111
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The TO-92
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J111 Benefits:
ƒ Short Sample & Hold Aperture Time
ƒ Low insertion loss
ƒ Low Noise
J111 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J111
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
t_(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
‐55°C to +150°C
‐55°C to +135°C
360mW
50mA
V_GDS = ‐35V
V_GSS = ‐35V
J111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
BV_GSS
Gate to Source Breakdown Voltage
‐35
‐‐
‐‐
V_GS(off)
Gate to Source Cutoff Voltage
‐3
‐‐
‐10
V_GS(F)
Gate to Source Forward Voltage
‐‐
0.7
‐‐
I_DSS
Drain to Source Saturation Current (Note 2) 20
‐‐
‐‐
I_GSS
Gate Reverse Current
‐‐
‐0.005
‐1
I_G
Gate Operating Current
‐‐
‐0.5
‐‐
I_D(off)
Drain Cutoff Current
‐‐
0.005
1
Click To ^rDS(on)
Drain to Source On Resistance
‐‐
‐‐
J111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
g_fs
Forward Transconductance
‐‐
6
30
MAX
‐‐
g_os
Output Conductance
‐‐
25
‐‐
r_DS(on)
Drain to Source On Resistance
‐‐
‐‐
30
C_iss
Input Capacitance
‐‐
7
12
C_rss
Reverse Transfer Capacitance
‐‐
3
5
e_n
Equivalent Noise Voltage
‐‐
3
‐‐
UNITS
CONDITIONS
I_G = 1µA, V_DS = 0V
V_DS = 5V, I_D = 1µA
V
I_G = 1mA, V_DS = 0V
mA
V_DS = 15V, V_GS = 0V
nA
V_GS = ‐15V, V_DS = 0V
pA
V_DG = 15V, I_D = 10mA
nA
V_DS = 5V, V_GS = ‐10V
Buy ^Ω
UNITS
mS
I_G = 1mA, V_DS = 0V
CONDITIONS
V_DS = 20V, I_D = 1mA , f = 1kHz
µS
Ω
V_GS = 0V, I_D = 0mA, f = 1kHz
pF
V_DS = 0V, V_GS = ‐10V, f = 1MHz
nV/√Hz
V_DG = 10V, I_D = 1mA , f = 1kHz
J111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
t_d(on)
Turn On Time
2
t_r
Turn On Rise Time
2
ns
t_d(off)
Turn Off Time
6
t_f
Turn Off Fall Time
15
V_DD = 10V
V_GS(H) = 0V
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which J111 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
J111 SWITCHING CIRCUIT PARAMETERS
V_GS(L)
R_L
I_D(on)
‐12V
800Ω
12mA
Available Packages:
J111 in TO-92
J111 in bare die.
TO-92 (Bottom View)
SWITCHING TEST CIRCUIT
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.